2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
KSC550
2D/KSC550
2D
T
1
1.Base 2.Collector 3.Emitter
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* Pulse Test : Pulse Width = 5ms, Duty Cycle
10%
Thermal Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1200
V
V
CEO
Collector-Emitter Voltage
600
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
2
A
I
CP
*Collector Current (Pulse)
4
A
I
B
Base Current (DC)
1
A
I
BP
*Base Current (Pulse)
2
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
EAS
Avalanche Energy(T
j
=25
C)
2.5
mJ
Symbol
Characteristics
Rating
Unit
R
jc
Thermal Resistance
Junction to Case
2.5
C/W
R
ja
Junction to Ambient
62.5
T
L
Maximun Lead Temperature for Soldering Purpose
: 1/8" from Case for 5 seconds
270
C
KSC5502D/KSC5502DT
High Voltage Power Switch Switching
Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : D-PAK or TO-220
D-PAK
TO-220
C
B
E
Equivalent Circuit
2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
KSC550
2D/KSC550
2D
T
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
1200
1350
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
600
750
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=500
A, I
C
=0
12
13.7
V
I
CES
Collector Cut-off Current
V
CES
=1200V,
V
BE
=0
T
C
=25
C
100
A
T
C
=125
C
500
I
CEO
Collector Cut-off Current
V
CE
=600V, I
B
=0
T
C
=25
C
100
A
T
C
=125
C
500
I
EBO
Emitter Cut-off Current
V
EB
=12V, I
C
=0
T
C
=25
C
10
A
h
FE
DC Current Gain
V
CE
=1V, I
C
=0.2A
T
C
=25
C
15
28
40
T
C
=125
C
8
18
V
CE
=1V, I
C
=1A
T
C
=25
C
4
6.4
T
C
=125
C
3
4.7
V
CE
=2.5V,
I
C
=0.5A
T
C
=25
C
12
20
30
T
C
=125
C
6
12
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.2A,
I
B
=0.02A
T
C
=25
C
0.31
0.8
V
T
C
=125
C
0.54
1.1
V
I
C
=0.4A,
I
B
=0.08A
T
C
=25
C
0.15
0.6
V
T
C
=125
C
0.23
1.0
V
I
C
=1A, I
B
=0.2A
T
C
=25
C
0.40
1.5
V
T
C
=125
C
1.3
3.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=0.4A,
I
B
=0.08A
T
C
=25
C
0.77
1.0
V
T
C
=125
C
0.60
0.9
V
I
C
=1A, I
B
=0.2A
T
C
=25
C
0.83
1.2
V
T
C
=125
C
0.70
1.0
V
C
ib
Input Capacitance
V
EB
=8V, I
C
=0, f=1MHz
385
500
pF
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
60
100
pF
f
T
Current Gain Bandwidth Product
I
C
=0.5A,V
CE
=10V
11
MHz
V
F
Diode Forward Voltage
I
F
=0.2A
T
C
=25
C
0.75
1.2
V
T
C
=125
C
0.59
V
I
F
=0.4A
T
C
=25
C
0.80
1.3
V
T
C
=125
C
0.64
V
I
F
=1A
T
C
=25
C
0.9
1.5
V
2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
KSC550
2D/KSC550
2D
T
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Test Condition
Min
Typ.
Max.
Units
t
fr
Diode Froward Recvery Time
(di/dt=10A/
s)
I
F
=0.2A
I
F
=0.4A
I
F
=1A
650
740
785
ns
ns
ns
V
CE
(DSAT)
Dynamic Saturation Voltage
I
C
=0.4A, I
B1
=80mA
V
CC
=300V
@ 1
s
7.2
V
@ 3
s
1.8
V
I
C
=1A, I
B1
=200mA
V
CC
=300V
@ 1
s
18
V
@ 3
s
6
V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s)
t
ON
Turn On Time
I
C
=0.4A,
I
B1
=80mA
I
B2
=0.2A,
V
CC
=300V
R
L
= 750
T
C
=25
C
175
350
ns
T
C
=125
C
185
ns
t
OFF
Turn Off Time
T
C
=25
C
2.1
3.0
s
T
C
=125
C
2.6
s
t
ON
Turn On Time
I
C
=1A,
I
B1
=160mA
I
B2
=160mA,
V
CC
=300V
R
L
= 300
T
C
=25
C
240
450
ns
T
C
=125
C
310
ns
t
OFF
Turn Off Time
T
C
=25
C
3.7
5.0
s
T
C
=125
C
4.5
s
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=0.4A,
I
B1
=80mA
I
B2
=0.2A,
V
Z
=300V
L
C
=200H
T
C
=25
C
1.2
2.0
s
T
C
=125
C
1.5
s
t
F
Fall Time
T
C
=25
C
90
200
ns
T
C
=125
C
65
ns
t
C
Cross-over Time
T
C
=25
C
185
350
ns
T
C
=125
C
145
ns
t
STG
Storage Time
I
C
=0.8A,
I
B1
=160mA
I
B2
=160mA,
V
CC
=300V
L
C
=200H
T
C
=25
C
3.3
4.5
s
T
C
=125
C
3.75
s
t
F
Fall Time
T
C
=25
C
90
250
ns
T
C
=125
C
160
ns
t
C
Cross-over Time
T
C
=25
C
300
600
ns
T
C
=125
C
570
ns
2001 Fairchild Semiconductor Corporation
KSC550
2D/KSC550
2D
T
Rev. A2, August 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
0
1
2
3
4
5
6
7
0
1
2
3
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
I
B
=100mA
200mA
I
C
[
A
]
,
C
O
L
L
E
C
T
O
R
C
URRE
NT
V
C E
[V ], C O L L E C T O R E M IT T E R V O L T A G E
1m
10m
100m
1
1
10
100
V
C E
=1V
T
J
=25
T
J
=125
h
FE
,
DC
CURR
E
N
T G
A
I
N
I
C
[A], CO LLE C TO R C U R RE NT )
1m
10m
100m
1
0.1
1
10
I
C
=5I
B
T
J
=25
T
J
=125
V
CE
(
s
a
t
)
(
V
)
,
V
O
LTA
G
E
I
C
(A), C O LLEC T O R C U R R E N T
1m
10m
100m
1
0.1
1
10
I
C
=10I
B
T
J
=25
T
J
=125
V
CE
(
s
a
t
)
(V
),
V
O
LT
A
G
E
I
C
(A), C O LLEC T OR C U R R EN T
1m
10m
100m
1
0
1
2
T
J
=25
2.0A
1.5A
1.0A
0.4A
I
C
=0.2A
V
CE
[V
],
V
O
L
T
A
G
E
I
B
[A], BAS E CU R R EN T
1m
10m
100m
1
0.1
1
10
I
C
=10I
B
T
J
=25
T
J
=125
V
BE
[V
],
V
O
L
T
A
G
E
I
C
[A], CO LLE CT O R C URR ENT
2001 Fairchild Semiconductor Corporation
KSC550
2D/KSC550
2D
T
Rev. A2, August 2001
Typical Characteristics
(Continued)
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Diode Forward Voltage
Figure 9. Collector Output Capacitance
Figure 10. Resistive Switching Time, t
on
Figure 11. Resistive Switching Time, t
off
Figure 12. Resistive Switching Time, t
on
1m
10m
100m
1
0.1
1
10
I
C
=5I
B
T
J
=25
T
J
=125
V
BE
[
V
]
,
VO
LT
AG
E
I
C
[A ], C O LLE C T O R C U R R E N T
1m
10m
100m
1
0.1
1
10
T
J
=25
T
J
=125
V
FD
[V
], V
O
L
T
A
G
E
I
F D
[A ], F O R W A R D C U R R E N T
1
10
100
10
100
1000
F=1MHz
C
ob
C
ib
C
A
P
A
CI
T
A
NCE
[
p
F
]
RE VE R SE VO LTA G E[V ]
0.3
0.4
0.5
0.6 0.7 0.8 0.9 11
2
3
100
100
200
300
400
500
600
700
800
900
1000
1000
2000
I
C
=5I
B 1
=2I
B 2
V
C C
=300V
PW=20us
T
J
=25
T
J
=125
t
ON
[n
s
],T
IM
E
I
C
[A], CO LLECT O R CU RRE NT
0.3
0.4
0.5
0.6 0.7 0.8 0.9 11
2
3
1
1
1.5
2
2.5
3
3.5
4
4.5
5
I
C
=5I
B 1
=2I
B 2
V
C C
=300V
PW =20us
T
J
=25
T
J
=125
t
ON
(u
s
)
,
T
I
M
E
I
C
[A ], C O L LE C T O R C U R R E N T
0.3
0.4
0.5
0.6 0.7 0.8 0.9 11
2
3
100
100
200
300
400
500
600
700
800
900
1000
1000
2000
I
C
=5I
B 1
=5I
B 2
V
c
=300V
PW=20us
T
J
=25
T
J
=125
t
ON
(
n
s
)
,T
IM
E
I
C
[A], CO LLECT OR CURRENT
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