2004 Fairchild Semiconductor Corporation
Rev. B2, April 2004
KSD102
0
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
* PW
10ms, Duty Cycle
50%
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: PW
350
s, Duty Cycle
2%
h
FE1
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current (DC)
700
mA
I
CP
* Collector Current (Pulse)
1.0
A
P
C
Collector Power Dissipation
350
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
100
nA
h
FE1
h
FE2
* DC Current Gain
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=700mA
120
35
200
140
400
V
BE
(on)
Base-Emitter On Voltage
V
CE
=6V, I
C
=10mA
600
640
700
mV
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=700mA, I
B
=70mA
0.2
0.4
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=700mA, I
B
=70mA
0.95
1.2
V
C
ob
Output Capacitance
V
CB
=6V, I
E
=0, f=1MHz
13
25
pF
f
T
Current Gain Bandwidth Product
V
CE
=6V, I
C
=10mA
50
170
MHz
Classification Y
G
h
FE1
120 ~ 240
200 ~ 400
KSD1020
Audio Frequency Amplifier
Complement to KSB810
1.Emitter 2. Collector 3. Base
TO-92S
1
2004 Fairchild Semiconductor Corporation
KSD102
0
Rev. B2, April 2004
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain-Bandwidth Product
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
I
B
= 140
A
I
B
= 120
A
I
B
= 100
A
I
B
= 80
A
I
B
= 40
A
I
B
= 60
A
I
B
= 20
A
I
C
[m
A
]
,
COL
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
10000
1
10
100
1000
V
CE
= 1V
h
FE
, DC
CURRE
NT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10000
10
100
1000
10000
I
C
=10I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V]
,
SA
T
URA
T
I
O
N
VO
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10000
1
10
100
1000
V
CE
= 6V
f
T
[M
Hz
],
CURREN
T
GAI
N
-
BANDW
IDT
H
PRODUCT
I
C
[mA], COLLECTOR CURRENT
2004 Fairchild Semiconductor Corporation
Rev. I10
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Advance Information
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This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
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