2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD169
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* PW
10ms, duty Cycle
50%
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse test: PW
50
s, duty Cycle
2% Pulsed
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
8
A
I
B
Base Current (DC)
1
A
P
C
Collector Dissipation (T
a
=25
C)
1.3
W
P
C
Collector Dissipation (T
C
=25
C)
20
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= 50V, I
E
= 0
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 7V, I
C
= 0
10
A
h
FE1
h
FE2
h
FE3
*DC Current Gain
V
CE
= 1V, I
C
= 0.1A
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 5A
60
100
50
400
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
0.1
0.3
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
0.9
1.2
V
t
ON
Turn ON Time
V
CC
= 10V, I
C
= 2A
I
B1
= - I
B2
= 0.2A
R
L
= 5
0.2
1
s
t
STG
Storage Time
1.1
2.5
s
t
F
Fall Time
0.2
1
s
Classification
O
Y
G
h
FE 2
100 ~ 200
160 ~ 320
200 ~ 400
KSD1691
Feature
Low Collector-Emtter Saturation Voltage & Large Collector Current
High Power Dissipation: P
C
= 1.3W (T
a
=25
C)
Complementary to KSB1151
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
KSD169
1
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
I
B
=
20
0m
A
I
B
= 80mA
I
B
= 40
mA
I
B
= 20mA
I
B
= 10
0mA
I
B
= 60mA
I
B
=
15
0m
A
I
B
= 30mA
I
B
= 10mA
I
B
= 0
Ic[A
],
CO
LL
E
C
T
O
R
CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
1000
V
CE
= 1V
V
CE
= 2V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
Ic = 10 I
B
V
CE
(s
at
)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
1
10
100
0.1
1
10
V
CE
O
(M
A
X
)
Ic(Pulse)MAX
2m
S
s/b Li
m
ite
d
Ic(DC)MAX
200m
S
10m
S
Dis
sipa
tio
n L
im
ite
d
I
C
[A],
COL
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
20
40
60
80
100
0
2
4
6
8
10
V
CE
O
(S
US
)
I
C
[A
], CO
LLE
CT
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
DI
SS
IPA
TIO
N LI
MIT
ED
s/b LI
MITE
D
d
T
[%
], I
c
DE
RA
T
I
NG
T
C
[
o
C], CASE TEMPERATURE
2000 Fairchild Semiconductor International
Rev. E
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Advance Information
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Design
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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