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2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD570
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current (DC)
3.5
A
I
CP
Collector Current (Pulse)
10
A
P
C
Collector Dissipation (T
C
=25
C)
50
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= 800V, I
E
= 0
10
A
I
EBO
Emitter Cut-off Current
V
EB
= 4V, I
C
= 0
40
250
mA
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 2.5A
10
2.5
30
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2.5A, I
B
= 0.8A
5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 2.5A, I
B
= 0.8A
1.5
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
3
MHz
V
F
Damper Diode Turn On Voltage
I
F
= 3.5A
2
V
t
F
Fall Time
V
CC
= 200V, I
C
= 3A
I
B1
= 0.8A, I
B2
= - 1.6A
R
L
= 66.7
0.4
s
KSD5701
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
High Collector-Base Voltage : V
CBO
=1500V
High Switching Speed : t
F
= 0.4
s (Max.)
For Color TV
C
B
E
50
typ.
Equivalent Circuit
TO-3PF
1.Base 2.Collector 3.Emitter
1
2000 Fairchild Semiconductor International
KSD570
1
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Switching Characteristic 1
Figure 6. Switching Characteristic 2
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
I
B
= 0.2A
I
B
= 0.6A
I
B
= 0.4A
I
B
= 1.4A
I
B
= 0.8A
I
B
= 1.2A
I
B
= 2.0A
I
B
= 1.8A
I
B
= 1.0A
I
B
= 1.6A
I
C
[A
],
CO
L
L
E
C
T
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
1
10
100
V
CE
= 5V
h
FE
, DC CU
RRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
100
I
C
= 5 I
B
I
C
= 3 I
B
V
CE
(
s
a
t
)
[
V],
SA
T
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
V
CE
= 5V
I
C
[A], C
O
L
L
ECT
O
R CU
RRENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
I
C
= 1.5A
I
C
= 2.5A
I
C
= 2.0A
t
F
[
S], C
O
L
L
ECT
O
R CUR
RENT
F
A
L
L
T
I
M
E
dI
B
/dt[A/
S], BASE CURRETN GRADIENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
I
C
= 1.5A
I
C
= 2.5A
I
C
= 2.0A
t
ST
G
[
S],
ST
O
R
AG
E T
I
ME
dI
B
/dt[A/
S], BASE CURRETN GRADIENT
2000 Fairchild Semiconductor International
KSD570
1
Rev. A, February 2000
Typical Characteristics
(Continued)
Figure 7. Safe Operating Area
Figure 8. Reverse Bias Safe Operating Area
Figure 9. Power Derating
1
10
100
1000
0.01
0.1
1
10
100
2000
I
C
max(DC)
I
C
max(Pulse)
10ms
1ms
300
s
DC
100
s
SINGLE PULSE
T
C
=25
O
C
I
C
[
A
]
,
CO
LLE
CT
O
R
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
10
100
1000
10000
0.1
1
10
100
I
C
MAX.(Pulse)
I
B2
=-0.5A Const
@ I
C
>2.5A
I
C
=5I
B1
=-5I
B2
L=500uH
SINGLE PULSE
I
C
[A], CO
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
P
C
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE
15.50
0.20
3.60
0.20
26.50
0.20
4.50
0.20
10.00
0.20
16.50
0.20
10
16.50
0.20
22.00
0.20
23.00
0.20
1.50
0.20
14.50
0.20
2.00
0.20
2.00
0.20
2.00
0.20
0.85
0.03
2.00
0.20
5.50
0.20
3.00
0.20
(1.50)
3.30
0.20
2.00
0.20
4.00
0.20
2.50
0.20
14.80
0.20
3.30
0.20
2.00
0.20
5.50
0.20
0.75
+0.20
0.10
0.90
+0.20
0.10
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
TO-3PF
Package Demensions
2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD570
1
Dimensions in Millimeters
2000 Fairchild Semiconductor International
Rev. E
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
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