2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH127
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 100
V
V
CEO
Collector-Emitter Voltage
- 100
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 8
A
I
CP
Collector Current (Pulse)
- 16
A
I
B
Base Current
- 120
mA
P
C
Collector Dissipation (T
C
=25
C)
20
W
Collector Dissipation (T
a
=25
C)
1.75
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
C
= - 30mA, I
B
= 0
- 100
V
I
CEO
Collector Cut-off Current
V
CE
= - 50V, I
B
= 0
- 10
A
I
CBO
Collector Cut-off Current
V
CB
= - 100V, I
E
= 0
- 10
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2
mA
h
FE
*DC Current Gain
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, V
EB
= -8A
1000
100
12K
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= - 4A, I
B
= - 16mA
I
C
= - 8A, I
B
= - 80mA
- 2
- 4
V
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= - 8A, I
B
= - 80mA
- 4.5
V
V
BE
(on)
*Base-Emitter On Voltage
V
CE
= -4V, I
C
= - 4A
- 2.8
V
C
ob
Output Capacitance
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
300
pF
KSH127
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, " - I " Suffix)
Electrically Similar to Popular TIP127
Complement to KSH122
Equivalent Circuit
B
E
C
R1
R2
R1 8k
R2 0.12k
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
2002 Fairchild Semiconductor Corporation
KSH127
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
-0.1
-1
-10
100
1k
10k
V
CE
= -4V
h
FE
, DC CU
RRE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
I
C
= 250 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
at)
[
V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
1000
C
ob
[
p
F
]
,
CAPACI
T
A
N
CE
V
CB
[V], COLLECTOR BASE VOLTAGE
-0.1
-1
-10
0.01
0.1
1
10
V
CC
= -30V
I
C
= 250I
B
I
B1
= -I
B2
t
D
, V
BE
(off)=0
t
R
t
R
,t
D
[
s
]
,
TU
R
N
O
N
TI
M
E
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
0.1
1
10
V
CC
= -30V
I
C
= 250I
B
I
B1
= -I
B2
t
F
t
STG
t
ST
G
,t
F
[
s
]
,
TU
R
N
O
F
F
TI
M
E
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
500
s
5m
s
100
s
1m
s
DC
I
C
[A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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