2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
KSH44H11
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
8
A
I
CP
Collector-Current (Pulse)
16
A
P
C
Collector Dissipation (T
C
=25
C)
20
W
Collector Dissipation (T
a
=25
C)
1.75
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
80
V
I
CEO
Collector Cut-off Current
V
CE
= 80V, I
B
= 0
10
A
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
50
A
h
FE
DC Current Gain
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
60
40
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 8A, I
B
= 0.4A
1
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= 8A, I
B
= 0.8A
1.5
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
50
MHz
C
ob
Output Capacitance
V
CB
=10V, f = 1MHz
130
pF
t
ON
Turn On Time
I
C
= 5A
I
B1
= - I
B2
= 0.5A
300
ns
t
STG
Storage Time
500
ns
t
F
Fall Time
140
ns
KSH44H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, "- I" Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
2002 Fairchild Semiconductor Corporation
KSH44H11
Rev. A3, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01
0.1
1
10
1
10
100
1000
V
CE
= 1V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
5m
s
100
s
500
s
1m
s
DC
I
CP
(max)
I
C
(max)
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
25
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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Advance Information
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This datasheet contains the design specifications for
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This datasheet contains final specifications. Fairchild
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