2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSK117
Silicon N-channel Junction Fet
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
I
DSS
Classification
Symbol
Parameter
Ratings
Units
V
GDS
Gate-Drain Voltage
-50
V
I
G
Gate-Current
10
mA
P
C
Collector Power Dissipation
300
mW
T
J
Junction Temperature
125
C
T
STG
Storage Temperature
-55 ~ 125
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GDS
Gate-Drain Breakdown Voltage
V
DS
=0, I
G
= -100
A
-50
V
I
GSS
Gate Leak Current
V
GS
= -30V, V
DS
=0
-1
nA
I
DSS
Drain Leak Current
V
DS
=10V, V
GS
=0 0.6
14
mA
V
GS
(off)
Gate-Source Voltage
V
DS
=10V, I
D
=0.1
A -0.2
-1.5
V
Y
FS
Forward Transfer Admittance
V
DS
=10V, V
GS
=0, f=1KHz
4.0
15
mS
C
ISS
Input Capacitance
V
DS
=0, V
GS
=0, f=1MHz
13
pF
C
RSS
Feedback Capacitance
V
GD
=10V, V
DS
=0
f=1MHz
3
pF
NF1
NF2
Noise Figure
V
DS
=10V, R
G
=1K
I
D
=0.5mA, f=10Hz
V
DS
=10V, R
G
=1K
I
D
=0.5mA, f=1Hz
5
1
10
2
dB
dB
Classification Y
G
L
I
DSS
(mA)
1.2 ~ 3.0
2.6 ~ 6.5
6.0 ~ 14
KSK117
Low Requency Low Noise AMP
High
Y
FS
: 15mS (TYP)
High Input Impedance: I
GSS
= -1nA
Low Noise, NF =1dB (TYP)
1. Drain 2. Gate 3. Source
TO-92
1
2001 Fairchild Semiconductor Corporation
KSK117
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. I
D
-V
DS
Figure 3. I
D
-V
GS
Figure 4.
Yfs
-I
D
Figure 5. V
GS
(off)-I
DSS
Figure 6.
Yfs
-I
DSS
-20
-10
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
=
0V
V
GS
= -0.4V
V
GS
[V], DRAIN-SOURCE
VOLTAGE
-0.2
-0.4
V
GS
= -0.3V
V
GS
= 0V
V
GS
= -0.1V
V
GS
= -0.2V
I
D
[
A], D
R
AIN CU
RRENT
V
DS
[V], DRAIN-SOURCE
VOLTAGE
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
= -0.3V
V
GS
= 0V
V
GS
= -0.1V
V
GS
= -0.2V
I
D
[m
A], DR
A
I
N CURR
E
N
T
V
DS
[V], DRAIN-SOURCE VOLTAGE
-1.6
-1.2
-0.8
-0.4
0.0
0
4
8
12
16
V
DS
= 10V
I
D
[m
A
]
, DRAIN
CURRENT
V
GS
[V], GATE-SOURCE VOLTAGE
0
4
8
12
16
0
8
16
24
32
I
DSS
= 1.0mA
I
DSS
= 2.2mA
I
DSS
= 4.2mA
I
DSS
= 6.9mA
I
DSS
= 12.8mA
V
DS
= 10V
f=1kHz
lY
FS
l [m
S
]
, F
O
RW
A
R
D T
R
ANSF
ER ADM
I
T
T
A
NCE
I
D
[mA], DRAIN CURRENT
1
10
0.1
1
10
-
-
-
I
DSS
:V
DS
= 10V
V
GS
=0
V
GS
(off):V
DS
=10V
I
D
= 0.1
A
V
GS
(
o
ff)
[V
], GA
T
E
-S
OU
RCE
CUT
-O
F
F
V
O
LT
A
G
E
I
DSS
[mA], DRAIN CURRENT
1
10
1
10
100
I
DSS
:V
DS
=10V
V
GS
=0V
lY
FS
l:V
DS
=10V
V
GS
=0V
f=1kHz
lY
FS
l [m
S], F
O
RW
A
R
D T
R
ANSF
ER
A
D
M
I
T
T
A
NCE
I
DSS
[mA], DRAIN CURRENT
2001 Fairchild Semiconductor Corporation
KSK117
Rev. A1, June 2001
Typical Characteristics
(Continued)
Figure 7. NF-V
DS
Figure 8. NF-I
D
Figure 9. NF-R
G
Figure 10. NF-f
Figure 11. Ciss-V
DS
Figure 12. Crss-V
GD
10
15
20
25
30
35
0
1
2
3
4
5
f = 1KHz
f = 120Hz
f = 10Hz
I
D
= 0.5mA
R
G
=1k
N
F
(
d
B)
,
NO
I
SE F
I
G
URE
V
DS
[V], DRAIN-SOURCE VOLTAGE
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
f = 1KHz
f = 120Hz
f = 10Hz
V
DS
= 10V
R
G
= 1k
N
F
(
d
B)
,
NO
I
SE F
I
G
URE
I
D
[mA], DRAIN CURRENT
100
1000
10000
100000
1000000
0
2
4
6
8
10
f = 1KHz
f = 120Hz
f = 10Hz
V
DS
= 10V
I
D
= 0.5mA
N
F
(
d
B)
, N
O
ISE F
I
G
U
R
E
R
G
[
], SOURCE RESISTANCE
10
100
1000
10000
100000
0
2
4
6
8
10
f = 1KHz
f = 120Hz
f = 10Hz
V
DS
= 10V
I
D
= 0.5mA
R
G
= 1K
NF
(
d
B
)
, NO
IS
E
F
IGUR
E
f[Hz], FREQUENCY
0.1
1
10
1
10
100
1000
V
GS
= 0
f = 1MHz
C
IS
S
[
p
F]
,
I
N
PUT
CAPACI
T
ANCE
V
DS
[V], DRAIN-SOURCE VOLTAGE
-0.1
-1
-10
0.1
1
10
100
I
D
= 0
f = 1MHz
C
RS
S
[
p
F]
,
F
EEDBACK
CAPACI
T
ANCE
V
GD
[V], GATE-DRAIN VOLTAGE
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