ChipFind - документация

Электронный компонент: KSK30R

Скачать:  PDF   ZIP
2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
KSK30
Silicon N-channel Junction Fet
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
I
DSS
Classification
Symbol
Parameter
Ratings
Units
V
GDS
Gate-Drain Voltage
-50
V
I
G
Gate-Current
10
mA
P
D
Collector Dissipation
100
mW
T
J
Junction Temperature
125
C
T
STG
Storage Temperature
-55 ~ 125
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GDS
Gate-Drain Breakdown Voltage
V
DS
=0, I
G
= -100
A
-50
V
I
GSS
Gate Leak Current
V
GS
= -30V, V
DS
=0
-1
nA
I
DSS
Drain Leak Current
V
DS
=10V, V
GS
=0 0.3
6.5
mA
V
GS
(off)
Gate-Source Voltage
V
DS
=10V, I
D
=0.1
A -0.4
-5
V
Y
FS
Forward Transfer Admittance
V
DS
=10V, V
GS
=0, f=1KHz
1.2
mS
C
iss
Input Capacitance
V
DS
=0, V
GS
=0, f=1MHz
8.2
pF
C
rss
Feedback Capacitance
V
GD
=10V, V
DS
=0
f=1MHz
2.6
pF
NF
Noise Figure
V
DS
=15V, V
GS
=0
R
G
=100K
f=120Hz
0.5
5
dB
Classification R
O
Y
G
I
DSS
(mA)
0.30 ~ 0.75
0.60 ~ 1.40
1.20 ~ 3.00
2.60 ~ 6.50
KSK30
Low Noise PRE-AMP. Use
High Input Impedance: I
GSS
=1nA (MAX)
Low Noise: NF=0.5dB (TYP)
High Voltage: V
GDS
= -50V
1. Source 2. Gate 3. Drain
TO-92
1
2002 Fairchild Semiconductor Corporation
KSK30
Rev. B1, November 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. I
D
-V
GS
Figure 3. I
D
-V
DS
Figure 4.



Yfs



-V
GS
Figure 5.



Yfs



-I
D
Figure 6. V
GS
(off)-I
DSS
-40
-20
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -1.6V
V
GS
= -1.4V
V
GS
= -1.2V
V
GS
= -1.0V
V
DS
=
0V
V
GS
= -0.4V
V
GS
[V], DRAIN-SOURCE
VOLTAGE
-0.8
-1.6
V
GS
= -0.6V
V
GS
= 0V
V
GS
= -0.8V
V
GS
= -0.2V
I
D
[m
A],
DRAIN
CURRENT
V
DS
[V], DRAIN-SOURCE
VOLTAGE
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
R
S
= 1k
R
S
= 2k
R
S
= 5k
R
S
= 10k
V
DS
= 10V
I
D
[m
A
]
, DRA
IN
CURRE
NT
V
GS
[V], GATE-SOURCE VOLTAGE
0.0
0.8
1.6
2.4
3.2
4.0
0.0
0.8
1.6
2.4
3.2
4.0
V
GS
= -1.4V
V
GS
= -1.2V
V
GS
= -1.6V
V
GS
= -1.0V
V
GS
= -0.8V
V
GS
= -0.6V
V
GS
= 0V
V
GS
= -0.2V
V
GS
= -0.4V
I
D
[m
A
]
, DRAIN
CURRENT
V
DS
[V], DRAIN-SOURCE VOLTAGE
-4.0
-3.2
-2.4
-1.6
-0.8
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V
DS
= 10V
f = 1KHz
lY
FS
l[
m
S
]
,
FO
RWARD
TRANST
ER ADM
I
TTA
N
C
E
V
GS
[V], GATE-SOURCE VOLTAGE
0.0
1.6
3.2
4.8
6.4
0.0
1.6
3.2
4.8
6.4
I
DS
S
=
0.
4m
A
I
DS
S
=
0.7m
A
I
DS
S
= 1.
7m
A
I
DSS
= 2.
8mA
I
DSS
= 6m
A
V
DS
= 10V
f = 1kHz
lY
FS
l
[
m
S]
,
F
O
RWARD T
R
ANSFER
ADM
I
TT
ANC
E
I
D
[mA], DRAIN CURRENT
0.1
1
10
0.1
1
10
-
-
-
I
DSS
:V
DS
= 10V
V
GS
=0
V
GS
(off):V
DS
=10V
I
D
= 0.1
A
V
GS
(
o
ff)
[V
], GA
T
E
-
S
OURC
E
V
O
LT
A
G
E
I
DSS
[mA], DRAIN CURRENT
2002 Fairchild Semiconductor Corporation
KSK30
Rev. B1, November 2002
Typical Characteristics
(Continued)
Figure 7.



Yfs



-I
DSS
Figure 8. Ciss-V
GS
, Crss-V
GD
Figure 9. Power Derating
0.1
1
10
100
0.1
1
10
100
I
DSS
:V
DS
=10V
V
GS
=0V
lY
FS
l:V
DS
=10V
V
GS
=0V
f=1kHz
T
a
= 25
lY
FS
l [m
S], F
O
RW
A
R
D T
R
ANSF
ER
A
D
M
I
T
T
A
NCE
I
DSS
[mA], DRAIN CURRENT
-0
-2
-4
-6
-8
-10
0.1
1
10
100
1000
V
GD
[V], GATE-DRAIN VOLTAGE
C
rss
[
p
F
]
,
FEED
BACK
CAPAC
I
T
AC
E
C
iss
: V
DS
= 0
C
rss
: V
GS
= 0
f = 1MHz
C
is
s
[
p
F
]
,
I
N
P
U
T C
APACI
T
ACE
V
GS
[V], GATE-SOURCE VOLTAGE
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
P
C
[m
W
]
, P
O
W
E
R
D
I
S
S
IP
AT
I
O
N
T
C
[
o
C], CASE TEMPERATURE
0.46
0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
0.20
]
1.27TYP
[1.27
0.20
]
3.60
0.20
14.47
0.40
1.02
0.10
(0.25)
4.58
0.20
4.58
+0.25
0.15
0.38
+0.10
0.05
0.38
+0.10
0.05
TO-92
Package Dimensions
KSK30
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
2002 Fairchild Semiconductor Corporation
Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FACTTM
FACT Quiet seriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnectTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
VCXTM
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
Across the board. Around the world.TM
The Power FranchiseTM
Programmable Active DroopTM