2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP
1
0
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
3.0
V
P
C
Collector Power Dissipation (T
a
=25
C)
350
mW
Derate above 25
C
2.8
mW/
C
P
C
Collector Power Dissipation (T
C
=25
C)
1.0
W
Derate above 25
C
8.0
W/
C
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55~150
C
Rth(j-c)
Thermal Resistance, Junction to Case
125
C/W
Rth(j-a)
Thermal Resistance, Junction to Ambient
357
C/W
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
25
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
3.0
V
I
CBO
Collector Cut-off Current
V
CB
=25V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
EB
=2V, I
C
=0
100
nA
h
FE
DC Current Gain
V
CE
=10V, I
C
=4mA
60
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=4mA, I
B
=0.4mA
0.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=10V, I
C
=4mA
0.95
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=4mA, f=100MHz
650
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.7
pF
C
rb
Collector Base Feedback Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.35
0.65
pF
C
crbb
Collector Base Time Constant
V
CB
=10V, I
C
=4mA,
f=31.8MHz
9.0
ps
KSP10
VHF/UHF transistor
1. Base 2. Emitter 3. Collector
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP
1
0
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Current Gain Bandwidth Product
Figure 4. Rectangular Form
Figure 5. Polar Form
Figure 6. Rectangular Form
1
10
100
1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC
CURRENT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
1000
10
100
1000
10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N
V
O
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
10
100
1000
10000
V
CE
= 10V
f=100MHz
f
T
[M
Hz
], CURRENT
GAI
N
-
BANDW
IDT
H
PRODUCT
I
C
[mA], COLLECTOR CURRENT
100
1000
20
40
60
80
100
120
140
-b
ib
g
ib
y
ib
[
],
IN
P
U
T
A
D
M
I
T
T
A
N
C
E
f[MHz], FREQUENCY
0
10
20
30
40
50
60
70
80
90
-60
-50
-40
-30
-20
-10
0
700
400
200
100
1000MHz
y
ob
[
],
O
U
T
P
UT
ADM
I
T
T
A
NCE
g
ib
[ ]
100
1000
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
b
fb
-g
fb
y
fb
[
],
FO
R
W
AR
D
TR
A
N
S
F
E
R
AD
M
I
TTA
N
C
E
f[MHz], FREQUENCY
2002 Fairchild Semiconductor Corporation
Rev. I1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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