2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSP
2
4
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage
30
V
I
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector Current
100
mA
P
C
Collector Power Dissipation (T
a
=25
C)
350
mW
Derate Above 25
C
2.8
mW/
C
T
J
Junction Temperature
135
C
T
STG
Storage Temperature
-55~150
C
R
TH
(j-a)
Thermal Resistance, Junction to Ambient
357
C/W
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
A, I
E
=0
40
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
30
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
4.0
V
I
CBO
Collector Cut-off Current
V
CB
=15V, I
E
=0
50
nA
h
FE
DC Current Gain
V
CE
=10V, I
C
=8mA
30
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=8mA,
f=100MHz
400
620
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.25
0.36
pF
G
CE
Conversion Gain (213 to 45MHz)
V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
19
24
dB
G
CE
Conversion Gain (60 to 45MHz)
V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
24
29
dB
KSP24
VHF Transistor
1. Base 2. Emitter 3. Collector
TO-92
1
2001 Fairchild Semiconductor Corporation
KSP
2
4
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Current Gain Bandwidth Product
Figure 4. Conversion Gain versus Collector Current
Figure 5. Conversion Gain versus Injection Level
Figure 6. Input Admittance
0.1
1
10
100
1000
1
10
100
1000
V
CE
= 10V
h
FE
, DC
CURRENT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
1000
10
100
1000
10000
V
CE
(sat)
V
BE
(sat)
I
C
= 10I
B
V
CE
(s
a
t
)
,
V
BE
(
s
a
t
)
[
m
A
]
,
SATURAT
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
10
100
1k
10k
V
CE
= 10V
f = 100MHz
f
T
[
M
Hz
],
CURRENT
GAIN-
BANDW
I
D
T
H
PRODUCT
I
C
[mA], COLLECTOR CURRENT
0
2
4
6
8
10
12
14
16
0
10
20
30
40
OSCInj = 150mVrms
f
sig
= 213MHz,
f
osc
= 275MHz
f
sig
= 60MHz,
f
osc
= 104MHz
G
PC
[d
B],
C
O
N
V
ER
SIO
N
G
A
IN
I
C
[mA], COLLECTOR CURRENT
0
100
200
300
400
0
10
20
30
40
I
C
= 8mA
DC
f
sig
= 213MHz,
f
osc
= 275MHz
f
sig
= 60MHz,
f
osc
= 104MHz
G
PC
[d
B],
C
O
N
V
ER
SIO
N
G
A
IN
V
i
[mV], OSCILLATION INJECTION
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
b
ie
b
ie
g
ie
g
ie
213MHz
60MHz
y
ie
[
], IN
P
U
T
ADMIT
T
A
N
C
E
I
C
[mA], COLLECTOR CURRENT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2001 Fairchild Semiconductor Corporation
Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MICROWIRETM
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SLIENT SWITCHER
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TruTranslationTM
TinyLogicTM
UHCTM
UltraFET
VCXTM
STAR*POWER is used under license
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