2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSP
44/4
5
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: KSP44
: KSP45
500
400
V
V
V
CEO
Collector-Emitter Voltage
: KSP44
: KSP45
400
350
V
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
300
mA
P
C
Collector Power Dissipation (T
a
=25
C)
625
mW
P
C
Collector Power Dissipation (T
C
=25
C)
1.5
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP44
: KSP45
I
C
=100
A, I
B
=0
500
400
V
V
BV
CEO
* Collector -Emitter Breakdown Voltage
: KSP44
: KSP45
I
C
=1mA, I
B
=0
400
350
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=100
A, I
C
=0
6
V
I
CBO
Collector Cut-off Current
: KSP44
: KSP45
V
CB
=400V, I
E
=0
V
CB
=320V, I
E
=0
0.1
0.1
A
A
I
CES
Collector Cut-off Current
: KSP44
: KSP45
V
CE
=400V, I
B
=0
V
CE
=320V, I
B
=0
0.5
0.5
A
A
I
EBO
Emitter Cut-off Current
V
EB
=4V, I
C
=0
0.1
A
h
FE
* DC Current Gain
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
40
50
45
40
200
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
0.4
0.5
0.75
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
0.75
V
C
ob
Output Capacitance
V
CB
=20V, I
E
=0, f=1MHz
7
pF
KSP44/45
High Voltage Transistor
Collector-Emitter Voltage: V
CEO
=KSP44: 400V
KSP45: 350V
Collector Power Dissipation: P
C
(max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSP
44/4
5
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Turn-On Switching Times
Figure 3. Turn-Off Switching Times
Figure 4. Capacitance
Figure 5. On Voltage
Figure 6. Collector Saturation Region
1
10
100
1000
10000
-40
-20
0
20
40
60
80
100
120
140
160
V
CE
=10V
h
FE
, DC CU
RRENT
GAIN
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
td
tf
V
CC
=150V
I
C
/I
B
=10
T
a
=25
V
BE
(off)=4V
t[
us
],
TIM
E
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
100
tf
ts
V
CC
=150V
I
C
/I
B
=10
T
a
=25
t[u
s], T
I
M
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
1000
1
10
100
1000
Cob
C
ib
T
a
=25
f=1MHz
C
ib
[p
F
]
,
C
ob
[p
F
]
,
C
APAC
IT
A
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
V
CE
(sat)@I
C
/I
B
=10
V
BE
(on) @V
CE
=10V
V
BE
(sat) @I
C
/I
B
=10
T
a
=25
[
V
]
,
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10000
100000
0.0
0.1
0.2
0.3
0.4
0.5
I
C
=50mA
I
C
=10mA
I
C
=1mA
T
a
=25
V
CE
[
V
]
CO
L
L
ECTO
R
EM
I
TTER VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
KSP
44/4
5
Rev. A2, November 2002
Typical Characteristics
(Continued)
Figure 7. High Frequency Current Gain
Figure 8. Safe Operating Area
0.1
1
10
100
1000
0.1
1
10
100
V
CE
=10V
f=10MHz
T
a
=25
h
FE
,
SM
AL
L
SI
G
N
AL
CUR
RENT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
10000
1
10
100
1000
10000
100000
T
c
=2
5
100us
1s
Valid for Duty Cycle
10%
MSPA44
T
a
=2
5
1ms
I
C
[m
A], C
O
L
L
ECT
O
R C
URRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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