2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP
92/9
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: KSP92
: KSP93
-300
-200
V
V
V
CEO
Collector-Emitter Voltage
: KSP92
: KSP93
-300
-200
V
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-500
mA
P
C
Collector Power Dissipation (T
a
=25
C)
625
mW
Derate above 25
C
5
mW/
C
P
C
Collector Power Dissipation (T
C
=25
C)
1.5
W
Derate above 25
C
12
mW/
C
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP92
: KSP93
I
C
= -100
A, I
E
=0
-300
-200
V
V
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
I
C
= -1mA, I
B
=0
-300
-200
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
A, I
C
=0
-5
V
I
CBO
Collector Cur-off Current
: KSP92
: KSP93
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
-0.25
-0.25
A
A
I
EBO
Emitter Cut-off Current
V
EB
= -3V, I
C
=0
-0.10
A
h
FE
* DC Current Gain
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
25
40
25
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA
-0.50
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA
-0.90
V
f
T
Current Gain Bandwidth Product
V
CE
= -20V, I
C
= -10mA, f=100MHz
50
MHz
C
ob
Output Capacitance
: KSP92
: KSP93
V
CB
= -20V, I
E
=0
f=1MHz
6
8
pF
pF
KSP92/93
High Voltage Transistor
1. Emitter 2. Base 3. Collector
TO-92
1
2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP
92/9
3
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Saturation Voltage
Figure 3. Capacitance
Figure 4. Current Gain Bandwidth Product
Figure 5. Active-Regio Safe Operating Area
-1
-10
-100
-1000
1
10
100
1000
V
CE
= -10V
h
FE
, DC
CURRE
NT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
-10
-100
-1000
-10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
),
V
CE
(s
a
t
)[
mV
], S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I
C
[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
C
ib
C
ob
C
ib
[p
F
],
C
ob
[p
F
],
C
A
PACI
T
ANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1
-10
-100
10
100
1000
V
CE
= -20V
f = 100MHz
f
T
[M
Hz],
CUR
RENT
GAIN BANDW
IDT
H
PRODU
C
T
I
C
[mA], COLLECTOR CURRENT
-3
-10
-100
-400
-5
-10
-100
-500
1.5 WATT THERMAL
LIMITATION@T
C
=25
625mW THERMAL
LIMITATION@T
A
=25
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION
T
j
=150
KSP93
KS
P9
2
10
0
s
1m
s
dc
I
C
[
m
A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2001 Fairchild Semiconductor Corporation
Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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2
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