www.docs.chipfind.ru
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45
0.040 (1.02)
1
3
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
ANODE
(CASE)
0.020 (0.51) 2X
0.155 (3.94)
MAX
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched to the TO-18 series phototransistor
Hermetically sealed package
High irradiance level
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300313
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LED55BF
LED55CF LED56F
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DS300313
NOTE:
1. Derate power dissipation linearly 1.70 mW/C above 25C ambient.
2. Derate power dissipation linearly 13.0 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into a solid angle of 2
!
steradians.
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
100
mA
Forward Current (pw, 1s; 200Hz)
I
F
10
A
Reverse Voltage
V
R
3
V
Power Dissipation (T
A
= 25C)
(1)
P
D
170
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
1.3
W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
I
F
= 100 mA
"
PE
--
940
--
nm
Emission Angle at 1/2 Power
#
--
40
--
Deg.
Forward Voltage
I
F
= 100 mA
V
F
--
--
1.7
V
Reverse Leakage Current
V
R
= 3 V
I
R
--
--
10
A
Total Power LED55BF
(7)
I
F
= 100 mA
P
O
3.5
--
--
mW
Total Power LED55CF
(7)
I
F
= 100 mA
P
O
5.4
--
--
mW
Total Power LED56F
(7)
I
F
= 100 mA
P
O
1.5
--
--
mW
Rise Time 0-90% of output
t
r
--
1.0
--
s
Fall Time 100-10% of output
t
f
--
1.0
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF LED56F
Figure 1. Power Output vs. Input Current
0.01
.001
.002
.005
.01
.02
.05
0.1
0.2
0.5
1.0
2
5
10
I
F
, FORWARD CURRENT (A)
0.02
0.05
0.1
0.2
0.5
1.0
2
5
10
20
50
100
P
O
, NORMALIZED POWER OUTPUT
I
F
= 100 mA
T
A
= 25
C
NORMALIZED TO
CONTINUOUS
FORWARD
CURRENT
P
W
= 80
sec
PULSED
FORWARD
CURRENT
Figure 2. Power Output vs. Temperature
0
0.2
-50
T
A
, AMBIENT TEMPERATURE (
C)
0.4
0.6
0.8
1.0
1.2
1.4
-25
0
150
P
O
, NORMALIZED POWER OUTPUT
75
50
25
100
125
I
F
= 100 mA
T
A
= 25
C
NORMALIZED TO
Figure 5. Typical Radiation Pattern
0
20
- ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
40
60
80
100
-80
-60
-40
RELATIVE OUTPUT (%)
20
0
-20
40
60
80
Figure 4. Forward Voltage vs. Forward Current
1
2
.9
V
F
, FORWARD VOLTAGE (V)
4
6
8
10
20
40
60
80
100
1.0
1.1
1.2
I
F
, FORWARD CURRENT (mA)
1.5
1.4
1.3
Figure 3. Forward Voltage vs. Forward Current
.01
.02
V
F
, FORWARD VOLTAGE (V)
.04
.06
.08
0.1
0.2
0.4
0.6
0.8
1.0
2.0
4.0
6.0
8.0
10
0
1
2
8
I
F
, FORWARD CURRENT (A)
5
4
3
6
7
10
9
T
A
= 100
C
25
C
-55
C
DS300313
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GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF LED56F
TYPICAL PERFORMANCE CURVES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF LED56F
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