MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpose Diode
Sourced from Process 1H.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
MARKING
MMBD1401 29
MMBD1404 33
MMBD1403 32
MMBD1405 34
29
3
1
2
CONNECTION DIAGRAMS
3
2
1
3
2
1
3
2
1
3
1
2 NC
Symbol
Parameter
Value
Units
W
IV
Working Inverse Voltage
175
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current
600
mA
i
f
Recurrent Peak Forward Current
700
mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
T
stg
Storage Temperature Range
-55 to +150
C
T
J
Operating Junction Temperature
150
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol
Characteristic
Max
Units
MMBD1401/1403/1404/1405*
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
1401
1403
1404
1405
SOT-23
3
1
2
MMBD1401 / 1403 / 1404 / 1405
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
I
R
= 100
A
200
V
I
R
Reverse Current
V
R
= 120 V
V
R
= 175 V
40
100
nA
nA
V
F
Forward Voltage
I
F
= 10 mA
I
F
= 50 mA
I
F
= 200 mA
I
F
= 300 mA
760
800
920
1.0
1.1
mV
mV
V
V
C
O
Diode Capacitance
V
R
= 0, f
= 1.0 MHz
2.0
pF
T
RR
Reverse Recovery Time
I
F
= I
R
= 30 mA,
I
RR
= 1.0 mA, R
L
= 100
50
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
3
5
10
20
30
50
100
275
300
325
I - REVERSE CURRENT (uA)
V
- R
EVER
SE VO
L
T
A
G
E
(V)
R
R
Ta= 25C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
55
75
95
115
135
155 175 195
0
10
20
30
40
50
V - REVERSE VOLTAGE (V)
I
- REVER
SE C
URR
EN
T
(n
A
)
R
R
Ta= 25C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
180
200
220
240
20
30
40
50
60
70
80
90
100
V - REVERSE VOLTAGE (V)
I
-
R
EVERSE
C
URR
ENT (nA
)
R
R
Ta= 25C
255
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1
2
3
5
10
20
30
50
100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V
-
F
O
RW
A
R
D
V
O
L
T
A
G
E
(
m
V
)
F
F
Ta= 25C
V
R
V
F
I
R
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpoise Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1
0.2 0.3
0.5
1
2
3
5
10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V
- F
O
R
W
A
R
D VOL
T
A
GE (mV)
F
F
725
Ta= 25C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
10
20
30
50
100
200 300
500
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
I - FORWARD CURRENT (mA)
V - FO
R
W
A
R
D
VOL
T
A
GE
(mV
)
F
F
800
Ta= 25C
Forward Voltage vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to + 80 Deg C)
0.001 0.003
0.01
0.03
0.1
0.3
1
3
10
200
400
600
800
I - FORWARD CURRENT (mA)
V
-
FOR
W
A
RD VOL
T
A
G
E (
m
V)
F
F
Ta= 25C
Ta= +80C
Ta= -40C
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
0
2
4
6
8
10
12
14
0.8
0.9
1
1.1
1.2
1.3
REVERSE VOLTAGE (V)
CA
P
A
C
I
T
A
NC
E (p
F)
Ta= 25C
15
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
0
50
100
150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
I
-
CURRENT
(
m
A
)
I -
FO
RW
ARD CURRE
NT
S
TE
ADY
S
TA
TE
-
m
A
o
R
F
Io - AV
ERAGE
RECT
IFIED
CURRE
NT - m
A
A
A
REVERSE RECOVERY TIME vs
REVERSE RECOVERY CURRENT (Irr)
1
1.5
2
2.5
3
20
30
40
50
Irr - REVERSE RECOVERY CURRENT (mA)
R
E
V
E
RS
E RE
COV
E
R
Y
(
n
S)
IF = IR = 30 mA
Rloop = 100 Ohms
V
F
V
F
V
F
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpoise Diode
(continued)
Typical Characteristics
(continued)
POWER DERATING CURVE
0
50
100
150
200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P
- PO
W
E
R D
I
S
SIP
A
T
ION
(m
W
)
O
D
o
DO-35 Pkg
SOT-23 Pkg
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpose Diode
(continued)
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Formative or
In Design
First Production
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