High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
MMBD7000
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
5C
3
1
2
Symbol
Parameter
Value
Units
W
IV
Working Inverse Voltage
70
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current
600
mA
i
f
Recurrent Peak Forward Current
700
mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
T
stg
Storage Temperature Range
-55 to +150
C
T
J
Operating Junction Temperature
150
C
Symbol
Characteristic
Max
Units
MMBD7000*
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
3
2
1
CONNECTION DIAGRAM
SOT-23
3
1
2
MMBD7000
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
I
R
= 100
A
100
V
I
R
Reverse Current
V
R
= 100 V
V
R
= 50 V
V
R
= 50 V, T
A
= 125
C
500
300
100
nA
nA
A
V
F
Forward Voltage
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
550
670
0.75
700
820
1.1
1.25
mV
mV
V
V
C
O
Diode Capacitance
V
R
= 0, f
= 1.0 MHz
1.5
pF
T
RR
Reverse Recovery Time
I
F
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
4.0
nS
MMBD7000
High Conductance Ultra Fast Diode
(continued)
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