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PN2369A / MMBT2369A / MMPQ2369
PN2369A
MMPQ2369
MMBT2369A
NPN Switching Transistor
This device is designed for high speed saturation switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
15
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
4.5
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2369A
MMBT2369A*
MMPQ2369
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
556
125
240
C/W
C/W
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1S
C
C
C
C
C
C
C
C
SOIC-16
E
B
E
B
E
B
E
B
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN2369A / MMBT2369A / MMPQ2369
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
15
V
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 10
A, V
BE
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
4.5
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
V
CB
= 20 V, I
E
= 0, T
A
= 125
C
0.4
30
A
A
ON CHARACTERISTICS
h
FE
DC Current Gain*
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 10 mA,V
CE
= 0.35 V,T
A
= -55
C
I
C
= 100 mA, V
CE
= 2.0 V
40
20
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125
C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
0.2
0.3
0.25
0.5
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= -55
C
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125
C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
0.7
0.59
0.85
1.02
1.15
1.6
V
V
V
V
V
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
5.0
pF
h
fe
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 10 V,
R
G
= 2.0 k
, f = 100 MHz
5.0
SWITCHING CHARACTERISTICS
(except MMPQ2369)
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
t
s
Storage Time
I
B1
= I
B2
= I
C
= 10 mA
13
ns
t
on
Turn-On Time
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA
12
ns
t
off
Turn-Off Time
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA, I
B2
= 1.5 mA
18
ns
NPN Switching Transistor
(continued)
PN2369A / MMBT2369A / MMPQ2369
DC Typical Characteristics
NPN Switching Transistor
(continued)
DC Current Gain
vs Collector Current
0.01
0.1
1
10
100
50
100
150
200
I - COLLECTOR CURRENT (mA)
h
-
D
C
C
U
R
R
EN
T
G
A
I
N
FE
C
V = 1V
CE
- 40 C
25 C
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
P 21
0.1
1
10
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TT
E
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
- 40 C
25 C
C
= 10
125 C
Base-Emitter Saturation
Voltage vs Collector Current
P 21
0.1
1
10
100
300
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
C
= 10
- 40 C
25 C
125 C
Base-Emitter ON Voltage vs
Collector Current
P 21
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(O
N
)
C
V = 1V
CE
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
1
10
100
600
T - AMBIENT TEMP ERATURE ( C)
I
-
CO
L
L
E
CT
O
R
CU
RRE
N
T
(n
A
)
A
V = 20V
CB
CBO
PN2369A / MMBT2369A / MMPQ2369
AC Typical Characteristics
Output Capacitances vs.
Reverse Bias Voltage
Switching Times
vs. Collector Current
Storage Time vs. Turn On
and Turn Off Base Currents
Switching Times vs.
Ambient Temperature
Storage Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
NPN Switching Transistor
(continued)
PN2369A / MMBT2369A / MMPQ2369
AC Typical Characteristics
(continued)
NPN Switching Transistor
(continued)
Fall Time vs. Turn On
and Turn Off Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
Delay Time vs. Base-Emitter OFF
Voltage and Turn On Base Current
Rise Time vs. Turn On Base
Current and Collector Current
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