PN4355 / MMBT4355
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current - Continuous
800
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
PN4355
C
B
E
TO-92
MMBT4355
C
B
E
SOT-23
Mark: 81
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
PN4355
*MMBT4355
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN4355 / MMBT4355
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
PNP General Purpose Amplifier
(continued)
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining
Voltage*
I
C
= 1.0 mA, I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 50 V, I
E
= 0
50
nA
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, V
CE
= 0
V
EB
= 4.0 V, I
C
= 0
10
100
A
nA
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
110
pF
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
1.0
5.0
NF
Noise Figure
I
C
= 100
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz,
BW = 1.0 Hz
1.0
3.0
dB
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
I
C
= 500 mA, V
CC
= 500 mA
100
ns
t
off
Turn-Off Time
I
B1
= I
B2
= 50 mA
400
ns
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 10 V
I
C
= 1.0mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 100 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
60
75
100
75
75
400
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
0.15
0.50
1.0
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
0.9
1.1
1.2
V
V
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 500 mA, V
CE
= 0.5 V
I
C
= 1.0 A, V
CE
= 1.0 V
1.1
1.2
V
V
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