2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
MMBT4356
Absolute Maximum Ratings *
T
A
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
-80
V
V
CBO
Collector-Base Voltage
-80
V
V
EBO
Emitter-Base Voltage
-5.0
V
I
C
Collector current
- Continuous
-800
mA
T
J
, T
stg
Operating and Storate Junction Temperature Range
-55 ~ +150
C
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
MMBT4356
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA.
Sourced from process 67.
See TN4033A for characteristics.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 82
2002 Fairchild Semiconductor Corporation
MMBT4356
Rev. A1, November 2002
Electrical Characteristics
T
A
=25
C unless otherwise noted
* Pulse Test: Pulse Width
300
s, Duty
2.0%
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
I
C
= -10mA, I
B
= 0
-80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -10
A, I
E
= 0
-80
V
V
(BR)EBS
Emitter-Base Breakdown Voltage
I
C
= -10
A, I
C
= 0
-5.0
V
I
CBO
Collector Cutoff Current
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 75
C
-50
-5.0
nA
A
I
CES
Collector Cutoff Current
V
CB
= -50V, I
E
= 0
-50
nA
I
EBO
Emitter Cutoff Current
V
EB
= -4.0V, I
C
= 0
-100
A
On Characteristics
h
FE
DC Current Gain
V
CE
= -10V, I
C
= -100
A
V
CE
= -10V, I
C
= -1.0mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -10V, I
C
= -500mA
25
40
50
40
30
250
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.15
-0.5
V
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.9
-1.1
V
V
Small Signal Characteristics
C
ob
Output Capacitance
V
CB
= -10V, f = 1MHz
30
pF
C
ib
Input Capacitance
V
BE
= -0.5V, f = 1MHz
110
pF
h
fe
Small-Signal Current Gain
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
1.0
5.0
NF
Noise Figure
V
CE
= -10V, I
C
= -100
A
R
S
= 1k
, f = 1kHz
B
W
= 1Hz
3.0
dB
Switching Characteristics
t
on
Turn-On Time
V
CC
= -30V, I
C
= -500mA
I
B1
= I
B2
= -50mA
100
ns
t
off
Turn-Off Time
400
ns
2002 Fairchild Semiconductor Corporation
Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FACTTM
FACT Quiet seriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ImpliedDisconnectTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
VCXTM
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
Across the board. Around the world.TM
The Power FranchiseTM
Programmable Active DroopTM
PDF 
ZIP