MPS5179 / MMBT5179 / PN5179
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100
A to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
12
V
V
CBO
Collector-Base Voltage
20
V
V
EBO
Emitter-Base Voltage
2.5
V
I
C
Collector Current - Continuous
50
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
MPS5179
MMBT5179
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
PN/MPS5179
*MMBT5179
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3C
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN5179
C
E
B
TO-92
5179, Rev B
MPS5179 / MMBT5179 / PN5179
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
CEO(
sus
)
Collector-Emitter Sustaining Voltage*
I
C
= 3.0 mA, I
B
= 0
12
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1.0
A, I
E
= 0
20
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
2.5
V
I
CBO
Collector Cutoff Current
V
CB
= 15 V, I
E
= 0
V
CB
= 15 V, T
A
= 150
C
0.02
1.0
A
A
h
FE
DC Current Gain
I
C
= 3.0 mA, V
CE
= 1.0 V
25
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.4
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
1.0
V
f
T
Current Gain - Bandwidth Product
I
C
= 5.0 mA, V
CE
= 6.0 V,
f = 100 MHz
900
2000
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0,
f = 0.1 to 1.0 MHz
1.0
pF
h
fe
Small-Signal Current Gain
I
C
= 2.0 mA, V
CE
= 6.0 V,
f = 1.0 kHz
25
300
rb'C
c
Collector Base Time Constant
I
C
= 2.0 mA, V
CB
= 6.0 V,
f = 31.9 MHz
3.0
14
ps
NF
Noise Figure
I
C
= 1.5 mA, V
CE
= 6.0 V,
R
S
= 50
, f = 200 MHz
5.0
dB
FUNCTIONAL TEST
G
pe
Amplifier Power Gain
V
CE
= 6.0 V, I
C
= 5.0 mA,
f = 200 MHz
15
dB
P
O
Power Output
V
CB
= 10 V, I
E
= 12 mA,
f
500 MHz
20
mW
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
MPS5179 / MMBT5179 / PN5179
DC Typical Characteristics
NPN RF Transistor
(continued)
DC Current Gain
vs Collector Current
0.001
0.01
0.1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
-
DC
CUR
REN
T
GA
I
N
FE
C
V =
5V
CE
- 40 C
25 C
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
P 40
0.1
1
10
20 30
0.05
0.1
0.15
0.2
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R-
EMI
T
TER
VOL
T
A
G
E
(
V
)
C
ESA
T
- 40 C
25 C
C
=
10
125 C
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
20 30
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
BA
SE-
EM
IT
T
E
R
V
O
L
T
A
GE (
V
)
BES
A
T
C
=
10
- 40 C
25 C
125 C
Base-Emitter ON Voltage vs
Collector Current
0.01
0.1
1
10
50
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE-
EMI
T
TER
ON VOL
T
A
GE (
V
)
BE
(
O
N)
C
V =
5V
CE
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LLE
CT
O
R
CUR
REN
T (
n
A
)
A
V
= 20V
CB
CB
O
MPS5179 / MMBT5179 / PN5179
AC Typical Characteristics
TO-92
SOT-23
Test Circuit
1000 pF
1000 pF
(NOTE 2)
175 pF
50 pF
2.2 K
- V
CC
RFC
(NOTE 1)
RFC
500 mHz Output
into 50
V
CC
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
D
POWER DISSIPATION vs
AMBIENT TEMPERATURE
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
PO
W
E
R D
I
SS
I
P
A
T
I
O
N
(
m
W
)
FIGURE 1: 500 MHz Oscillator Circuit
NPN RF Transistor
(continued)
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