2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN Gen
e
ra
l Purpose Amplifier
August 2005
MMBT5550
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Absolute Maximum Ratings *
T
a
= 25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
140
V
V
CBO
Collector-Base Voltage
160
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector current
- Continuous
600
mA
T
J
, T
stg
Junction and Storage Temperature
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
I
C
= 1.0mA, I
B
= 0
140
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
160
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10mA, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 100V, I
E
= 0
V
CB
= 100V, I
E
= 0, T
a
= 100
C
100
100
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.0V, I
C
= 0
50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
60
60
20
250
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
0.15
0.25
V
V
V
BE(sat)
Base-Emitter On Voltage
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
1.0
1.2
V
V
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Marking: 1F
2
www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN Gen
e
ra
l Purpose Amplifier
Electrical Characteristics
T
a
= 25C unless otherwise noted
Thermal Characteristics
T
a
=25
C unless otherwise noted
* Device mounted on FR-4 PCB 1.6"
1.6"
0.06."
Package Marking and Ordering Information
Symbol
Parameter
Test Condition
Min.
Max.
Units
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
50
MHz
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1.0MHz
6.0
pF
C
ibo
Input Capacitance
V
BE
= 0.5V, I
C
= 0, f = 1.0MHz
30
pF
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1F
MMBT5550
SOT-23
7"
--
3,000
3
www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN Gen
e
ra
l Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltaget
0.1
1
10
100
0
50
100
150
200
250
50
20
5
2
0.5
0.2
-40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
- TYPI
C
AL PU
L
S
ED
C
U
RRE
NT
G
AIN
I
C
- COLLECTOR CURRENT (mA)
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
- 40
o
C
25
o
C
125
o
C
= 10
V
CE
SAT
-
COLLECTOR EMI
TTER VOLTAGE
(V)
I
C
- COLLECTOR CURRENT (mA)
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
200
125
o
C
25
o
C
- 40
o
C
= 10
V
BE
SAT
- BA
SE EM
I
TTER
VOLTAGE
(V)
I
C
- COLLECTOR CURRENT (mA)
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
V
BE
O
N
- B
A
SE EM
ITTE
R ON
VOL
T
A
G
E (V
)
I
C
- COLLECTOR CURRENT (mA)
25
50
75
100
125
1
10
50
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
LL
E
C
TO
R
C
U
R
R
E
N
T
(
n
A
)
A
CBO
V = 100V
CB
0.1
1
10
100
0
5
10
15
20
25
30
V - COLLECTOR VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E
(
pF)
C
f = 1.0 MHz
CE
C
cb
ib
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