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PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81
MPSH81
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
20
V
V
CBO
Collector-Base Voltage
20
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current - Continuous
50
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH81
*MMBTH81
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3D
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPSH81 / MMBTH81
3
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
20
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
20
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
3.0
V
I
CBO
Collector Cutoff Current
V
CB
= 10 V, I
E
= 0
100
nA
I
EBO
Emitter Cutoff Current
V
EB
= 2.0 V, I
C
= 0
100
nA
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 10 V
60
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 5.0 mA, I
B
= 0.5 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 5.0 mA, V
CE
= 10 V
0.9
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 5.0 mA, V
CE
= 10 V,
f = 100 MHz
600
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.85
pF
C
ce
Collector Emitter Capcitance
V
CB
= 10 V, I
B
= 0, f = 1.0 MHz
0.65
pF
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
PNP RF Transistor
(continued)
MPSH81 / MMBTH81
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Spice Model
DC Current Gain vs
Collector Current
0.1
1
10
100
0
20
40
60
80
100
120
140
160
180
200
I - COLLECTOR CURRENT (mA)
h
-
DC
CU
RRE
N
T
G
A
I
N
C
FE
V = 1.0V
CE
-
-
-
-
T = 125C
A
T = 25C
A
T = 55C
A
-
Collector Saturation Voltage
vs Collector Current
0.1
1
10
100
0.01
0.02
0.05
0.1
0.2
0.5
1
I - COLLECTO R CURRENT ( mA)
V
-
C
O
L
L
E
C
T
O
R
S
A
T
.
V
O
L
T
A
G
E
(
V
)
C
-
-
-
-
-
-
-
-
-
-
T = 55C
A
-
T = 25C
A
T = 125C
A
I = 10 I
C
B
-
CE
(
S
AT
)
MPSH81 / MMBTH81
Typical Characteristics
(continued)
PNP RF Transistor
(continued)
Input / Output Capacitance
vs Reverse Bias Voltage
-10
-8
-6
-4
-2
0
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
C
ibo
f = 1.0 MHz
C
obo
Contours of Constant Gain
Bandwidth Product (f )
0.1
1
10
100
-14
-12
-10
-8
-6
-4
-2
0
I - COLLECTOR CURRENT (mA)
V
-
CO
L
L
EC
T
O
R
VO
L
T
A
G
E (
V
)
CE
C
-
-
-
-
T
200 MHz
500 MHz
900 MHz
200 MHz
500 MHz
1200 MHz
1500 MHz
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
P
O
W
E
R
DI
SS
I
P
A
T
I
O
N (
m
W
)
D
SOT-23
TO-92
Base-Emitter ON Voltage
vs Collector Current
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
I - COLLE CTOR CURRENT (mA)
V
-
B
A
SE-
E
M
I
T
T
E
R
O
N
VO
L
T
A
G
E (
V
)
BE
(
O
N
)
C
V = 10V
CE
-
-
-
-
A
T = 25C
A
T = 100C
A
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
-1.6
-1.4
-1.2
- 1
-0.8
-0.6
-0.4
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
-
E
M
I
T
T
E
R
S
A
T
.
V
O
L
T
A
G
E
(
V
)
BE
(
S
A
T
)
C
-
-
-
-
T = 55
C
A
-
T = 25
C
A
T = 125
C
A
I = 10 I
C
B
Collector Reverse Current
vs Ambient Temperature
25
50
75
100
125
150
0.01
0.1
1
10
100
T - AM BIENT TE MPE RATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
n
A
)
CE
S
A
V = -6.0V
CE
V = -3.0V
CE
TO-92 Tape and Reel Data
March 2001, Rev. B1
2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130mm x
83mm
Intermediate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
NO EOL
CODE
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5 Ammo boxes per
Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
NO LEADCLIP
2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style "A", D26Z, D70Z (s/h)
Machine Option "A" (H)
Style "E", D27Z, D71Z (s/h)
Machine Option "E" (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
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