MPSA14 / MMBTA14 / PZTA14
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
MMBTA14
MPSA14
PZTA14
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Characteristic
Max
Units
MPSA14
*MMBTA14
**PZTA14
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
125
C/W
Thermal Characteristics
TA = 25C unless otherwise noted
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1N
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
A14, Rev B
MPSA14 / MMBTA14 / PZTA14
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 100
A, I
B
= 0
30
V
I
CBO
Collector-Cutoff Current
V
CB
= 30 V, I
E
= 0
100
nA
I
EBO
Emitter-Cutoff Current
V
EB
= 10 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
10,000
20,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 0.1 mA
1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5 V,
f = 100 MHz
125
MHz
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
-
TYPI
CA
L PU
LSE
D
C
URRE
NT G
A
I
N
(
K
)
C
FE
25 C
125 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
E
MITTE
R V
O
L
T
A
G
E (V
)
C
C
E
SA
T
25C
- 40 C
125 C
= 1000
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
- B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
SA
T
25 C
- 40 C
125 C
= 1000
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
EM
IT
T
E
R O
N
V
O
L
T
A
GE (
V
)
C
BEON
V = 5V
CE
- 40 C
25 C
125 C
MPSA14 / MMBTA14 / PZTA14
Typical Characteristics
(continued)
NPN Darlington Transistor
(continued)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1
1
10
100
1000
59.5
60
60.5
61
61.5
62
62.5
RESISTANCE (k )
BV
-
BR
E
A
KDOW
N
VOL
T
A
GE
(V)
CE
R
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
TO
R CU
RR
EN
T (
n
A
)
A
CB
O
V = 30V
CB
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
2
5
10
20
V - COLLECTOR VOLTAGE(V)
C
A
P
A
C
IT
A
N
C
E
(
pF)
ce
Cib
Cob
f = 1.0 MHz
Gain Bandwidth Product
vs Collector Current
1
10
20
50
100 150
0
10
20
30
40
50
I - COLLECTOR CURRENT (mA)
f
-
G
A
I
N
BA
N
D
W
I
DT
H
P
R
O
DUC
T
(M
Hz
)
C
T
V = 5V
ce
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
POW
E
R DI
SSIP
A
TION (
W
)
D
o
SOT-223
TO-92
SOT-23
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