2002 Fairchild Semiconductor Corporation
April 2002
Rev. B1,April 2002
I
S
L9
N3
0
2
A
S3
ST
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0019
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0027
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 110nC, V
GS
= 5V
Q
gd
(Typ) = 31nC
C
ISS
(Typ) = 11000pF
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
75
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
75
A
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
JA
= 43
o
C/W)
28
A
Pulsed
Figure 4
A
P
D
Power dissipation
Derate above 25
o
C
345
2.3
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-263
0.43
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263
62
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
43
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N302AS
ISL9N302AS3ST
TO-263AB
330mm
24mm
800 units
D
G
S
TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
I
S
L9
N3
0
2
A
S3
ST
Electrical Characteristics
T
A
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1
-
3
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 75A, V
GS
= 10V
-
0.0019
0.0023
I
D
= 75A, V
GS
= 4.5V
-
0.0027
0.0033
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
11000
-
pF
C
OSS
Output Capacitance
-
2000
-
pF
C
RSS
Reverse Transfer Capacitance
-
900
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 75A
I
g
= 1.0mA
200
300
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
110
165
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
12
18
nC
Q
gs
Gate to Source Gate Charge
-
25
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
31
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 28A
V
GS
= 4.5V, R
GS
= 1.5
-
-
224
ns
t
d(ON)
Turn-On Delay Time
-
29
-
ns
t
r
Rise Time
-
120
-
ns
t
d(OFF)
Turn-Off Delay Time
-
45
-
ns
t
f
Fall Time
-
34
-
ns
t
OFF
Turn-Off Time
-
-
119
ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 28A
V
GS
= 10V, R
GS
= 1.5
-
-
204
ns
t
d(ON)
Turn-On Delay Time
-
16
-
ns
t
r
Rise Time
-
120
-
ns
t
d(OFF)
Turn-Off Delay Time
-
70
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
150
ns
t
AV
Avalanche Time
I
D
= 7.2A, L = 3.0mH
480
-
-
s
V
SD
Source to Drain Diode Voltage
I
SD
= 75A
-
-
1.25
V
I
SD
= 40A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
42
ns
Q
RR
Reverse Recovered Charge
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
34
nC
2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
I
S
L9
N3
0
2
A
S3
ST
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
PO
WER
D
I
S
SI
P
A
T
I
O
N
M
U
L
T
I
P
L
I
ER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
20
40
60
80
25
50
75
100
125
150
175
I
D
,
DRAIN
CURRE
NT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 4.5V
V
GS
= 10V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t , RECTANGULAR PULSE DURATION (s)
Z
JC
,N
O
R
M
A
L
I
Z
E
D
T
H
E
R
M
A
L
I
M
P
E
DANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
DM
,
P
E
A
K
CURRE
NT
(
A
)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
5000
50
2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
I
S
L9
N3
0
2
A
S3
ST
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued)
0
25
50
75
100
125
150
1.5
2.0
2.5
3.0
3.5
I
D
,
DRAIN
CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
0
25
50
75
100
125
150
0.5
1.0
1.5
2.0
I
D
,
DRAIN
CURRE
NT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3V
0
0
2
4
6
8
10
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 75A
r
DS
(
O
N)
,
DRAIN
T
O
S
O
URCE
O
N
RE
S
I
S
T
ANCE
(
m
)
I
D
= 10A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80
-40
0
40
80
120
160
200
NO
RM
AL
IZ
E
D
DRAIN
T
O
S
O
URCE
T
J
, JUNCTION TEMPERATURE (
o
C)
O
N
RE
S
I
S
T
ANCE
V
GS
= 10V, I
D
= 75A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
NO
RM
AL
I
Z
E
D
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
H
R
E
S
H
OL
D
V
O
L
T
A
GE
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NO
RM
AL
IZ
E
D
DRAIN
T
O
S
O
URCE
BRE
AKDO
W
N
V
O
L
T
AG
E
I
D
= 250
A
2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
I
S
L9
N3
0
2
A
S3
ST
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
1000
10000
0.1
1
10
C,
CA
P
ACIT
ANCE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
V
GS
= 0V, f = 1MHz
20000
500
30
0
2
4
6
8
10
50
100
150
200
250
V
GS
,
G
A
T
E
T
O
S
O
URCE
V
O
L
T
AG
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 75A
I
D
= 28A
WAVEFORMS IN
DESCENDING ORDER:
0
0
200
400
600
800
1000
0
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 28A
t
r
t
d(ON)
t
d(OFF)
t
f
0
200
400
600
800
1000
1200
1400
10
20
30
40
50
S
W
IT
CHING
T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 28A
t
d(ON)
t
f
t
r
0
t
d(OFF)
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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