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Электронный компонент: N303AP

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2002 Fairchild Semiconductor Corporation
September 2002
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
I
S
L9N303AP3
/
I
S
L9N303AS3S
T

/
I
S
L9N303AS3
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET Trench MOSFETs
30V, 75A, 3.2m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0026
(Typ), V
GS
= 10V
r
DS(ON)
= 0.004
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 61nC, V
GS
= 5V
Q
gd
(Typ) = 17nC
C
ISS
(Typ) = 7000pF
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
75
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
75
A
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
JA
= 43
o
C/W)
25
A
Pulsed
Figure 4
P
D
Power dissipation
Derate above
215
1.43
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
0.7
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
62
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
43
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N303AS
ISL9N303AS3ST
TO-263AB
330mm
24mm
800 units
N303AP
ISL9N303AP3
TO-220AB
Tube
N/A
50 units
N303AS
ISL9N303AS3
TO-262AA
Tube
N/A
50 units
D
G
S
PWM Optimized
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
TO-262AB
TO-263AB
TO-220AB
DRAIN
DRAIN
GATE
GATE
SOURCE
SOURCE
(FLANGE)
DRAIN
(FLANGE)
2002 Fairchild Semiconductor Corporation
I
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L9N303AP3
/
I
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L9N303AS3S
T

/
I
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L9N303AS3
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1
-
3
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 75A, V
GS
= 10V
-
0.0026
0.0032
I
D
= 75A, V
GS
= 4.5V
-
0.004
0.005
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
7000
-
pF
C
OSS
Output Capacitance
-
1350
-
pF
C
RSS
Reverse Transfer Capacitance
-
570
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 75A
I
g
= 1.0mA
115
172
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
61
92
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
6.5
9.8
nC
Q
gs
Gate to Source Gate Charge
-
14
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
17
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 24A
V
GS
= 4.5V, R
G
= 2.4
-
-
155
ns
t
d(ON)
Turn-On Delay Time
-
22
-
ns
t
r
Rise Time
-
80
-
ns
t
d(OFF)
Turn-Off Delay Time
-
35
-
ns
t
f
Fall Time
-
25
-
ns
t
OFF
Turn-Off Time
-
-
90
ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 24A
V
GS
= 10V, R
G
= 2.4
-
-
123
ns
t
d(ON)
Turn-On Delay Time
-
12
-
ns
t
r
Rise Time
-
69
-
ns
t
d(OFF)
Turn-Off Delay Time
-
51
-
ns
t
f
Fall Time
-
21
-
ns
t
OFF
Turn-Off Time
-
-
107
ns
t
AV
Avalanche Time
I
D
= 4.1A L = 3.0 mH
275
-
-
s
V
SD
Source to Drain Diode Voltage
I
SD
= 75A
-
-
1.25
V
I
SD
= 35A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
31
ns
Q
RR
Reverse Recovered Charge
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
20
nC
2002 Fairchild Semiconductor Corporation
I
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L9N303AP3
/
I
S
L9N303AS3S
T

/
I
S
L9N303AS3
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R
D
I
S
S
IP
A
T
ION
MUL
T
IP
L
I
E
R
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1
1.2
125
150
0
20
40
60
80
25
50
75
100
125
150
175
I
D
, DRAIN CUR
RENT

(
A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORM
AL
IZ
ED
T
H
ERM
A
L
I
M
PE
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
2
10
-5
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
3000
50
I
DM
, PE
AK CURRENT
(
A
)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
2002 Fairchild Semiconductor Corporation
I
S
L9N303AP3
/
I
S
L9N303AS3S
T

/
I
S
L9N303AS3
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristics
0
30
60
90
120
150
1.5
2
2.5
3
3.5
I
D
, DRAIN CURRENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3.5V
2
4
6
8
10
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 75A
r
DS(
O
N)
, DRAIN T
O

S
O
URCE
ON RES
I
ST
ANCE
(
m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
= 24A
0.5
1
1.5
2
-80
-40
0
40
80
120
160
200
NORM
AL
IZ
E
D
DRAIN T
O
SOUR
CE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RES
I
S
T
ANCE
V
GS
= 10V, I
D
=75A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1
1.2
1.4
-80
-40
0
40
80
120
160
200
NORM
AL
IZ
E
D
GA
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRES
H
OL
D V
O
L
T
A
G
E
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
IZ
ED DRAIN T
O
SOURCE
I
D
= 250
A
BRE
AKDO
WN
V
O
L
T
A
GE
2002 Fairchild Semiconductor Corporation
I
S
L9N303AP3
/
I
S
L9N303AS3S
T

/
I
S
L9N303AS3
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristics
1000
10000
0.1
1
10
30
300
C, CAP
A
C
IT
ANCE (
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
50
100
150
V
GS
, GA
T
E
T
O
SOURCE V
O
L
T
A
G
E
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 75A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
0
100
200
300
400
500
0
10
20
30
40
50
SWIT
CHING T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 24A
t
d(OFF)
t
r
t
d(ON)
t
f
S
W
I
T
C
H
IN
G T
I
ME
(n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 24A
t
d(OFF)
t
r
t
d(ON)
t
f
0
10
20
30
40
50
0
200
400
600
800
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0