May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE
NDB508A / NDB508AE / NDB508B / NDB508BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol Parameter
NDP508A NDP508AE
NDB508A NDB508AE
NDP508B NDP508BE
NDB508B NDB508BE
Units
V
DSS
Drain-Source Voltage
80
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
80
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50
s)
40
V
I
D
Drain Current - Continuous
19
17
A
- Pulsed
57
51
A
P
D
Total Power Dissipation @ T
C
= 25
C
75
W
Derate above 25
C
0.5
W/
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
C
NDP508.SAM
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
19 and 17A, 80V. R
DS(ON)
= 0.08 and 0.10
.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175C maximum junction temperature rating.
High density cell design (3 million/in) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
D
G
S
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 25 V, I
D
= 19 A
NDP508AE
NDP508BE
NDB508AE
NDB508BE
55
mJ
I
AR
Maximum Drain-Source Avalanche Current
19
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
ALL
80
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 80 V,
V
GS
= 0 V
ALL
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
ALL
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
ALL
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250 A
ALL
2
2.9
4
V
T
J
= 125C
1.4
2.3
3.6
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 9.5 A
NDP508A
NDP508AE
NDB508A
NDB508AE
0.057
0.08
T
J
= 125C
0.097
0.16
V
GS
= 10 V,
I
D
= 8.5 A
NDP508B
NDP508BE
NDB508B
NDB508BE
0.1
T
J
= 125C
0.2
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
NDP508A
NDP508AE
NDB508A
NDB508AE
19
A
NDP508B
NDP508BE
NDB508B
NDB508BE
17
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 9.5 A
ALL
6
9.6
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
750
900
pF
C
oss
Output Capacitance
ALL
200
250
pF
C
rss
Reverse Transfer Capacitance
ALL
60
90
pF
NDP508.SAM
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
V
DD
= 40 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 15
ALL
8.5
20
nS
t
r
Turn - On Rise Time
ALL
66
110
nS
t
D(OFF)
Turn - Off Delay Time
ALL
31
50
nS
t
f
Turn - Off Fall Time
ALL
48
80
nS
Q
g
Total Gate Charge
V
DS
= 64 V,
I
D
= 19 A, V
GS
= 10 V
ALL
23.5
34
nC
Q
gs
Gate-Source Charge
ALL
4.5
nC
Q
gd
Gate-Drain Charge
ALL
11.8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
19
A
NDP508B
NDP508BE
NDB508B
NDB508BE
17
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP508A
NDP508AE
NDB508A
NDB508AE
57
A
NDP508B
NDP508BE
NDB508B
NDB508BE
51
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 9.5 A
ALL
0.87
1.3
V
T
J
= 125C
0.79
1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 19 A,
dI
S
/dt = 100 A/s
ALL
78
110
ns
I
rr
Reverse Recovery Current
ALL
5.2
75
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
ALL
2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
ALL
62.5
C/W
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
NDP508.SAM
NDP508.SAM
0
1
2
3
4
5
6
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
10
8.0
7.0
6.0
5.0
V = 20V
GS
DS
D
12
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 9.5A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
J
V , NORMALIZED
th
V = V
DS
GS
I = 250
A
D
0
10
20
30
40
50
60
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 6V
GS
D
R , NORMALIZED
DS(on)
7.0
20
10
12
8.0
0
10
20
30
40
50
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
8
0
5
1 0
1 5
2 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = 10V
DS
GS
D
T = -55C
J
NDP508.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250A
BV , NORMALIZED
DSS
J
D
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
5
10
30
50
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
10
20
30
40
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 19A
D
V = 12V
DS
64
24
1
2
3
5
10
20
50
40
100
200
500
1000
1600
V , DRAIN TO SOURCE VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
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