May 1994
NDP510A / NDP510AE / NDP510B / NDP510BE
NDB510A / NDB510AE / NDB510B / NDB510BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol Parameter
NDP510A NDP510AE
NDB510A NDB510AE
NDP510B NDP510BE
NDB510B NDB510BE
Units
V
DSS
Drain-Source Voltage
100
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
100
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50
s)
40
V
I
D
Drain Current - Continuous
15
13
A
- Pulsed
60
52
A
P
D
Total Power Dissipation @ T
C
= 25
C
75
W
Derate above 25
C
0.5
W/
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
C
NDP510.SAM
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
15 and 13A, 100V. R
DS(ON)
= 0.12 and 0.15
.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175C maximum junction temperature rating.
High density cell design (3 million/in) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
D
G
S
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 25 V, I
D
= 15 A
NDP510AE
NDP510BE
NDB510AE
NDB510BE
65
mJ
I
AR
Maximum Drain-Source Avalanche Current
15
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 100 V,
V
GS
= 0 V
ALL
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
ALL
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
ALL
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250 A
ALL
2
3
4
V
T
J
= 125C
1.4
2.3
3.6
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 7.5 A
NDP510A
NDP510AE
NDB510A
NDB510AE
0.088
0.12
T
J
= 125C
0.16
0.24
V
GS
= 10 V,
I
D
= 6.5 A
NDP510B
NDP510BE
NDB510B
NDB510BE
0.15
T
J
= 125C
0.3
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
NDP510A
NDP510AE
NDB510A
NDB510AE
15
A
NDP510B
NDP510BE
NDB510B
NDB510BE
13
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 7.5 A
ALL
6
8.6
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
740
900
pF
C
oss
Output Capacitance
ALL
160
180
pF
C
rss
Reverse Transfer Capacitance
ALL
40
50
pF
NDP510.SAM
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
V
DD
= 50 V, I
D
= 15 A,
V
GS
= 10 V, R
GEN
= 24
ALL
10
20
nS
t
r
Turn - On Rise Time
ALL
63
100
nS
t
D(OFF)
Turn - Off Delay Time
ALL
49
80
nS
t
f
Turn - Off Fall Time
ALL
45
75
nS
Q
g
Total Gate Charge
V
DS
= 80 V,
I
D
= 15 A, V
GS
= 10V
ALL
22.5
30
nC
Q
gs
Gate-Source Charge
ALL
4.5
nC
Q
gd
Gate-Drain Charge
ALL
10.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
NDP510A
NDP510AE
NDB510A
NDB510AE
15
A
NDP510B
NDP510BE
NDB510B
NDB510BE
13
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP510A
NDP510AE
NDB510A
NDB510AE
60
A
NDP510B
NDP510BE
NDB510B
NDB510BE
52
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 7.5 A
ALL
0.89
1.3
V
T
J
= 125C
0.85
1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 15 A,
dI
S
/dt = 100 A/s
ALL
98
140
ns
I
rr
Reverse Recovery Current
ALL
6.8
10
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
ALL
2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
ALL
62.5
C/W
Notes:
1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
NDP510.SAM
NDP510.SAM
0
2
4
6
8
0
10
20
30
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
10
8.0
7.0
6.0
5.0
V = 20V
GS
DS
D
12
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 7.5A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
0
10
20
30
40
0.8
1.2
1.6
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 5V
GS
D
R , NORMALIZED
DS(on)
7.0
20
10
12
8.0
6.0
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
8
0
5
1 0
1 5
2 0
2 5
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = 10V
DS
GS
D
T = -55C
J
NDP510.SAM
-50
-25
0
25
50
75
100
125
150
175
0.96
0.98
1
1.02
1.04
1.06
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
5
10
15
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
10
20
30
40
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 15A
D
V = 20V
DS
80
50
0.1
0.2
0.5
1
2
5
10
20
50
30
100
200
500
1000
1600
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
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