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Электронный компонент: NDB6020P

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September 1997

NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
NDP6020P
NDB6020P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage - Continuous
8
V
I
D
Drain Current
- Continuous
-24
A
- Pulsed
-70
P
D
Total Power Dissipation @ T
C
= 25C
60
W
Derate above 25C
0.4
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
NDP6020P Rev.C1
-24 A, -20 V. R
DS(ON)
= 0.05
@ V
GS
= -4.5 V.
R
DS(ON)
= 0.07
@ V
GS
= -2.7 V.
R
DS(ON)
= 0.075
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
D
S
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
A
T
J
= 55C
-10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-0.4
-0.7
-1
V
T
J
= 125C
-0.3
-0.56
-0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -12 A
0.041
0.05
T
J
= 125C
0.06
0.08
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -10 A
0.059
0.07
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.5 V, I
D
= -10 A
0.064
0.075
I
D(on)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-24
A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -12 A
14
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1590
pF
C
oss
Output Capacitance
725
pF
C
rss
Reverse Transfer Capacitance
215
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= -20 V, I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6
15
30
nS
t
r
Turn - On Rise Time
27
60
nS
t
D(off)
Turn - Off Delay Time
120
250
nS
t
f
Turn - Off Fall Time
70
150
nS
Q
g
Total Gate Charge
V
DS
= -10 V,
I
D
= -24 A, V
GS
= -5 V
25
35
nC
Q
gs
Gate-Source Charge
5
nC
Q
gd
Gate-Drain Charge
10
nC
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-24
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
-80
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -12 A
(Note 1)
-1.1
-1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= -24 A,
dI
F
/dt = 100 A/s
60
ns
I
rr
Reverse Recovery Current
-1.7
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
2.5
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP6020P Rev.C1
NDP6020P Rev.C1
-50
-25
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V =-4.5V
G S
I = -12A
D
-50
-25
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I = -250A
D
V = V
GS
DS
-50
-40
-30
-20
-10
0
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -2.5 V
GS
D
R , NORMALIZED
DS(on)
-3.5
-3.0
-4.5
-4.0
-5.0
-2.7
-50
-40
-30
-20
-10
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -4.5V
GS
T = 125C
J
25C
-55C
-2.5
-2
-1.5
-1
-0.5
- 1 0
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -5V
DS
G S
D
T = -55C
J
125C
25C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
-5
-4
-3
-2
-1
0
-50
-40
-30
-20
-10
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -5.0V
GS
DS
D
-3.0
-3.5
-2.5
-4.5
-4.0
-2.0
-2.7
NDP6020P Rev.C1
- 5 0
- 2 5
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
0 . 9 6
0 . 9 8
1
1 . 0 2
1 . 0 4
1 . 0 6
1 . 0 8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250A
D
J
BV , NORMALIZED
DSS
0
0 .2
0 .4
0.6
0 .8
1
1 .2
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
4
1 0
2 0
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
1 0
2 0
3 0
4 0
0
2
4
6
8
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-10V
-15V
I = -24A
D
0 .1
0 .2
0 .5
1
2
5
1 0
2 0
1 0 0
2 0 0
3 0 0
5 0 0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
D
S
-V
DD
R
L
V
O U T
V
GS
D U T
V
IN
R
GEN
G
1 0 %
5 0 %
9 0 %
1 0 %
9 0 %
9 0 %
5 0 %
V
IN
V
O U T
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
1 0 %
PULSE WIDTH
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
Typical Electrical Characteristics
(continued)