May 1996
NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
NDP6051
NDB6051
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
50
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50 s)
40
I
D
Drain Current
- Continuous
48
A
- Pulsed
144
P
D
Total Power Dissipation @ T
C
= 25C
100
W
Derate above 25C
0.67
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
NDP6051 Rev. C1
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
48 A, 50 V. R
DS(ON)
= 0.022
@ V
GS
= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 48 A
300
mJ
I
AR
Maximum Drain-Source Avalanche Current
48
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
50
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 50 V, V
GS
= 0 V
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
2.8
4
V
T
J
= 125C
1.4
2.2
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 24 A
0.018
0.022
T
J
= 125C
0.03
0.04
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 24 A
14
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1220
pF
C
oss
Output Capacitance
520
pF
C
rss
Reverse Transfer Capacitance
190
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 10 V, R
GEN
= 7.5
10
20
nS
t
r
Turn - On Rise Time
132
250
nS
t
D(off)
Turn - Off Delay Time
28
55
nS
t
f
Turn - Off Fall Time
80
150
nS
Q
g
Total Gate Charge
V
DS
= 24 V,
I
D
= 48 A, V
GS
= 10V
37
53
nC
Q
gs
Gate-Source Charge
8
Q
gd
Gate-Drain Charge
22
NDP6051 Rev. C1
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
48
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
144
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 24 A
(Note 1)
0.9
1.3
V
T
J
= 125C
0.8
1.2
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 48 A,
dI
F
/dt = 100 A/s
35
140
ns
I
rr
Reverse Recovery Current
2
8
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
1.5
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP6051 Rev. C1
NDP6051 Rev. C1
0
1
2
3
4
5
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 12V
GS
DS
D
6.0
7.0
8.0
10
9.0
5.0
-50
-25
0
25
50
75
100
125
150
175
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 24A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I = 250A
D
V = V
GS
DS
0
20
40
60
80
100
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 6.0V
GS
9.0
10
8.0
12
7.0
0
20
40
60
80
100
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 10V
GS
T = 125C
J
25C
-55C
D
R , NORMALIZED
DS(on)
2
4
6
8
10
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation With
Temperature
.
NDP6051 Rev. C1
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
2
5
20
50
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
20
40
60
80
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
48V
I = 48A
D
V = 12V
DS
24V
1
2
3
5
10
20
30
50
100
200
300
500
1000
2000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
Typical Electrical Characteristics
(continued)
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
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