March 1996

NDP7050L / NDB7050L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

________________________________________________________________________________

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

NDP7050L

NDB7050L

Units

DSS

Drain-Source Voltage

DGR

Drain-Gate Voltage (R

< 1 M

)

GSS

Gate-Source Voltage - Continuous

± 20

- Nonrepetitive (t

< 50 µs)

± 40

Drain Current

- Continuous

- Pulsed

225

Total Power Dissipation @ T

= 25°C

150

Derate above 25°C

W/°C

STG

Operating and Storage Temperature Range

-65 to 175

°C

NDP7050L.SAM

75A, 50V, R

DS(ON)

= 0.015

@ V

= 5V

Low drive requirements allowing operation directly from logic

drivers. V

GS(TH)

< 2.0V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications.

These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE AVALANCHE RATINGS

(Note 1)

DSS

Single Pulse Drain-Source Avalanche
Energy

= 25 V, I

= 75 A

550

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250 µA

DSS

Zero Gate Voltage Drain Current

= 50 V, V

= 0 V

250

µA

= 125°C

GSSF

Gate - Body Leakage, Forward

= 20 V, V

= 0 V

100

GSSR

Gate - Body Leakage, Reverse

= -20 V, V

= 0 V

-100

ON CHARACTERISTICS

(Note 1)

GS(th)

Gate Threshold Voltage

= V

, I

= 250 µA

1.3

= 125°C

0.65

0.8

1.5

DS(ON)

Static Drain-Source On-Resistance

= 5 V, I

= 37.5 A

0.01

0.015

= 125°C

0.016

0.024

D(on)

On-State Drain Current

= 5 V, V

= 10 V

Forward Transconductance

= 10 V, I

= 37.5 A

DYNAMIC CHARACTERISTICS

iss

Input Capacitance

= 25 V, V

= 0 V,

f = 1.0 MHz

4200

4000

oss

Output Capacitance

1100

1600

rss

Reverse Transfer Capacitance

310

800

SWITCHING CHARACTERISTICS

(Note 1)

D(on)

Turn - On Delay Time

= 30 V, I

= 75 A,

= 5 V, R

GEN

= 10

Turn - On Rise Time

460

600

D(off)

Turn - Off Delay Time

100

150

Turn - Off Fall Time

270

400

Total Gate Charge

= 48 V,

= 75 A, V

= 5 V

115

Gate-Source Charge

Gate-Drain Charge

NDP7050L.SAM

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS

Maximum Continuos Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

225

Drain-Source Diode Forward Voltage

= 0 V, I

= 37.5 A

(Note 1)

0.92

1.3

= 125°C

0.85

1.2

Reverse Recovery Time

= 0 V, I

= 60A,

/dt = 100 A/µs

108

150

Reverse Recovery Current

4.6

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP7050L.SAM

NDP7050L.SAM

-50

-25

100

125

150

175

0.5

0.75

1.25

1.5

1.75

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = 10V

I = 40A

R , NORMALIZED

DS(ON)

-50

-25

100

125

150

175

0.4

0.6

0.8

1.2

1.4

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

V , NORMALIZED

GS(th)

I = 250µA

V = V

100

120

0.6

0.8

1.2

1.4

1.6

1.8

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(on)

4.5

5.0

3.5

4.0

6.0

V = 3.0V

100

120

0.6

0.8

1.2

1.4

1.6

1.8

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 5V

T = 125°C

25°C

-55°C

R , NORMALIZED

DS(on)

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 10V

T = -55°C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

0.5

1.5

2.5

100

120

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = 10V

2.5

3.0

5.0

4.5

3.5

6.0

4.0

NDP7050L.SAM

-50

-25

100

125

150

175

0.9

0.95

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = 250µA

BV , NORMALIZED

DSS

0.2

0.4

0.6

0.8

1.2

1.4

0.001

0.01

0.1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

V = 0V

T = 125°C

25°C

-55°C

120

160

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

48V

I = 75A

V = 12V

24V

200

300

500

1000

2000

5000

7000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz
V = 0V

oss

iss

rss

OUT

DUT

GEN

1 0 %

5 0 %

9 0 %

1 0 %

9 0 %

5 0 %

O U T

o n

off

d(off)

d(on)

INVERTED

1 0 %

PULSE W IDTH

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

Typical Electrical Characteristics

(continued)

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NDB7050L