April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
NDF0610
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDF0610
NDS0610
Units
V
DSS
Drain-Source Voltage
-60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
-60
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50 s)
30
V
I
D
Drain Current - Continuous
-0.18
-0.12
A
- Pulsed
-1
P
D
Maximum Power Dissipation T
A
= 25
C
0.8
0.36
W
Derate above 25
C
5
2.9
mW/
o
C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
T
L
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
300
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
200
350
C/W
NDS0610.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
-0.18 and -0.12A, -60V. R
DS(ON)
= 10
Voltage controlled p-channel small signal switch
High density cell design for low R
DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
G
D
S
SOT-23
NDS0610
S
D
G
1998 Fairchild Semiconductor Corporation
S
G
D
TO-92
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -10 A
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -48 V, V
GS
= 0 V
-1
A
T
J
= 125C
-200
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
10
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-10
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -1 mA
-1
-2.4
-3.5
V
T
J
= 125C
-0.6
-2.1
-3.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.5 A
3.6
10
T
J
= 125C
5.9
16
V
GS
= -4.5 V, I
D
= -0.25 A
5.2
20
T
J
= 125C
7.9
30
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -10 V
-0.6
-1.6
A
V
GS
= -4.5 V, V
DS
= -10 V
-0.35
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -0.1 A
70
170
mS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
40
60
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
3.2
5
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= -25 V, I
D
= -0.18 A,
V
GS
= -10 V, R
GEN
= 25
7
10
nS
t
r
Turn - On Rise Time
5
15
nS
t
D(off)
Turn - Off Delay Time
13
15
nS
t
f
Turn - Off Fall Time
10
20
nS
Q
g
Total Gate Charge
V
DS
= -48 V,
I
D
= -0.5 A, V
GS
= -10 V
1.43
nC
Q
gs
Gate-Source Charge
0.6
nC
Q
gd
Gate-Drain Charge
0.25
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Source Current
-0.18
A
I
SM
Maximum Pulse Source Current
(Note 1)
-1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.5 A
(Note 1)
-1.2
-1.5
V
T
J
= 125C
-0.98
-1.3
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -0.5 A,
dI
F
/dt = 100 A/s
40
ns
I
rr
Reverse Recovery Current
2.8
A
Note:
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
NDS0610.SAM
NDS0610.SAM
-10
-8
-6
-4
-2
0
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DR
A
IN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-8
-7
-6
-5
-4
-9
-5 0
-25
0
25
50
75
1 0 0
1 2 5
1 5 0
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R ,
NO
R
MA
LIZED
DS(ON)
I = -0.5A
V = -10V
D
GS
-50
-25
0
25
50
75
100
125
150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEM PERATURE (C)
GAT
E-SO
URCE THRESHOLD VOLTAGE
J
V = V
I = -1m A
D
DS
GS
V ,
NORMAL
IZED
th
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE O
N
-RESISTANCE
T = 125C
J
-55
D
R ,
NOR
MAL
IZED
DS(on)
125
2 5
-55
V
-4.5V
-10V
GS
2 5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
-10
-8
-6
-4
-2
0
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DR
A
IN CURRENT (A)
25
125
V = -10V
DS
GS
D
T = -55C
J
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.8
1
1.2
1.4
1.6
1.8
2
2.2
I , DRA IN CURRENT (A)
DR
A
IN-SOURCE O
N
-RESIST
AN
CE
V = -4V
GS
D
R , NOR
MAL
IZED
DS(on)
-5
-7
-8
-9
-10
-6
NDS0610.SAM
-50
-25
0
2 5
5 0
7 5
100
125
150
0 .9
0 .95
1
1 .05
1 .1
1 .15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = -10A
D
BV , NORMALIZED
DSS
J
0 .6
0 .8
1
1 .2
1 .4
1 .6
1 .8
0 .1
0 .2
0 .3
0 .5
1
1 .5
-V , BODY DIODE FORW A RD VOLTAGE (V)
-I , REVERSE DRAIN CURRE
NT (A)
V = 0V
GS
T = 125C
J
25
-5 5
SD
S
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
1 .4
1 .6
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
-4 8
V = -12V
DS
I = -0.5A
D
-24
0 .1
0 .2
0 .5
1
2
5
1 0
2 0 3 0
6 0
2
3
5
1 0
2 0
3 0
5 0
7 0
-V , DRA IN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
0 .1
0 .2
0 .3
0 .4
I , DRAIN CURRENT (A)
g
, TR
ANS
CONDUCTANC
E (SIE
M
E
NS)
T = -55C
J
2 5
D
FS
V = -10V
DS
1 2 5
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Transconductance Variation with Drain
Current and Temperature
Typical Electrical Characteristics
(continued)
NDS0610.SAM
1
2
5
10
2 0
30
60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
- V , DRAIN -SOURCE VOLTAGE (V)
-I , DR
A
IN CURRENT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25C
GS
A
RDS(ON) Li
m it
100
m s
1 m
s
10
m s
DC
1s
100us
10s
1
2
5
1 0
2 0
3 0
6 0 8 0
0 .0 0 5
0 .01
0 .05
0 .1
0 .5
1
2
3
- V , DRA IN-SOURCE VOLTAGE (V)
-I , DRAIN CURRE
NT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25C
GS
A
RDS(ON) Li
m it
100
m s
1 m
s
10
m s
DC
1s
100us
10s
Figure 12. NDF0610 (TO-92)
Maximum Safe Operating Area
Figure 13. NDS0610 (SOT-23) Maximum Safe
Operating Area
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 200 C/ W
Datasheet)
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .2
o
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 350 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
o
Figure 14. NDF0610 (TO-92) Transient Thermal
Response Curve.
Figure 15. NDS0610 (SOT-23) Transient Thermal
Response Curve.
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