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Электронный компонент: NDH832P

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June 1996
NDH832P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDH832P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage
-8
V
I
D
Drain Current - Continuous
(Note 1a)
-4.2
A
- Pulsed
-15
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
20
C/W
NDH832P Rev. B2
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
-4.2A, -20V. R
DS(ON)
= 0.06
@ V
GS
= -4.5V
R
DS(ON)
= 0.08
@ V
GS
= -2.7V
.
High density cell design for extremely low R
DS(ON).
Enhanced SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
1
5
6
7
8
4
3
2
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
A
T
J
= 55
o
C
-10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-0.4
-0.7
-1
V
T
J
= 125
o
C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -4.2 A
0.045
0.06
T
J
= 125
o
C
0.063
0.12
V
GS
= -2.7 V, I
D
= -3.7 A
0.064
0.08
I
D(on)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-15
A
V
GS
= -2.7 V, V
DS
= -5 V
-5
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -4.2 A
9
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1000
pF
C
oss
Output Capacitance
530
pF
C
rss
Reverse Transfer Capacitance
180
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
13
20
ns
t
r
Turn - On Rise Time
53
70
ns
t
D(off)
Turn - Off Delay Time
60
80
ns
t
f
Turn - Off Fall Time
33
40
ns
Q
g
Total Gate Charge
V
DS
= -10 V,
I
D
= -4.2 A, V
GS
= -4.5 V
18
30
nC
Q
gs
Gate-Source Charge
1.2
nC
Q
gd
Gate-Drain Charge
6
nC
NDH832P Rev. B2
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.5
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.5 A
(Note 2)
-0.75
-1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
JA
(
t
)
=
T
J
-
T
A
R
JC
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.026 in
2
pad of 2oz copper.
c. 135
o
C/W when mounted on a 0.005 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDH832P Rev. B2
1a
1b
1c
NDH832P Rev. B2
-4
-3
-2
-1
0
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -4.5V
GS
DS
D
-2.5
-1.5
-2.0
-3.0
-2.7
-3.5
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -4.5V
GS
I = -4.2A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
-20
-16
-12
-8
-4
0
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -2.5V
GS
-3.0
-2.7
-5.0
-4.5
-4.0
-3.5
-20
-16
-12
-8
-4
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = -4.5V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
-20
-16
-12
-8
-4
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55C
J
25C
125C
NDH832P Rev. B2
-50
-25
0
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250A
D
BV , NORMALIZED
DSS
J
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.0001
0.001
0.01
0.1
1
2
1 0
2 0
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
5
10
15
20
25
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -4.2A
D
V = -5.0V
DS
-10V
-15V
0.1
0.2
0.5
1
2
5
1 0
20
1 0 0
2 0 0
3 0 0
5 0 0
1 0 0 0
2 0 0 0
2 5 0 0
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
-20
-16
-12
-8
-4
0
0
5
10
15
20
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25C
125C
D
FS
V = -10V
DS
Figure 11. Transconductance Variation with Drain
Current and Temperature.