May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDM3000
Units
V
DSS
Drain-Source Voltage (All Types)
30
V
V
GSS
Gate-Source Voltage (All Types)
20
V
I
D
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
3.0
A
- Pulsed
(Note 1a & 2)
10
P
D
Total Power Dissipation
(Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or
(Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
2.5
W
1.6
1.4
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
NDM3000 Rev. E
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
3.0A, 30V, 2.5W
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
Q1
Q2
Q5
Q3
Q6
Q4
1,16
8,9
4,13
11,14
3,6
2
7
5
10
15
12
1997 Fairchild Semiconductor Corporation
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1)
20
C/W
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
All
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
All
1
A
T
J
=55
o
C
25
A
I
GSS
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
ON CHARACTERISTICS
(Note 3)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
Q1, Q3, Q5
-1
-1.6
-3
V
T
J
=125
o
C
-0.7
-1.25
-2.2
V
DS
= V
GS
, I
D
= 250 A
Q2, Q4, Q6
1
1.7
3
T
J
=125
o
C
0.7
1.2
2.2
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -3.0 A
Q1, Q3, Q5
0.125
0.16
T
J
=125
o
C
0.18
0.29
V
GS
= -4.5 V, I
D
= -1.0 A
0.16
0.25
V
GS
= 10 V, I
D
= 3.0 A
Q2, Q4, Q6
0.07
0.09
T
J
=125
o
C
0.1
0.16
V
GS
= 4.5 V, I
D
= 1.0 A
0.09
0.13
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
Q1, Q3, Q5
-10
A
V
GS
= 10 V, V
DS
= 5 V
Q2, Q4, Q6
10
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
Q1, Q3, Q5
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2, Q4, Q6
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q1, Q3, Q5
375
pF
Q2, Q4, Q6
360
C
oss
Output Capacitance
Q1, Q3, Q5
245
pF
Q2, Q4, Q6
260
C
rss
Reverse Transfer Capacitance
Q1, Q3, Q5
130
pF
Q2, Q4, Q6
105
NDM3000 Rev. E
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 3)
t
D(on)
Turn - On Delay Time
Q1, Q3, Q5
V
DD
= -15 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
Q2, Q4, Q6
V
DD
= 15 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Q1, Q3, Q5
10
40
ns
Q2, Q4, Q6
9
40
t
r
Turn - On Rise Time
Q1, Q3, Q5
13
40
ns
Q2, Q4, Q6
21
40
t
D(off)
Turn - Off Delay Time
Q1, Q3, Q5
21
90
ns
Q2, Q4, Q6
21
90
t
f
Turn - Off Fall Time
Q1, Q3, Q5
5
50
ns
Q2, Q4, Q6
8
50
Q
g
Total Gate Charge
Q1, Q3, Q5
V
DS
= -10 V,
I
D
= -3.0 A, V
GS
= -10 V
Q2, Q4, Q6
V
DS
= 10 V,
I
D
= 3.0 A, V
GS
= 10 V
Q1, Q3, Q5
10
25
nC
Q2, Q4, Q6
9.5
25
Q
gs
Gate-Source Charge
Q1, Q3, Q5
1.6
nC
Q2, Q4, Q6
1.5
Q
gd
Gate-Drain Charge
Q1, Q3, Q5
3
nC
Q2, Q4, Q6
2.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1, Q3, Q5
-1.2
A
Q2, Q4, Q6
1.2
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -3.0 A
(Note 3)
Q1, Q3, Q5
-0.8
-1.3
V
V
GS
= 0 V, I
S
= 3.0 A
(Note 3)
Q2, Q4, Q6
0.8
1.3
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 3.0 A,
dI
F
/dt = 100 A/s
All
100
ns
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 80
o
C/W when mounted on a 0.027 in
2
pad of 2oz cpper.
c. 90
o
C/W when mounted on a 0.0028 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDM3000 Rev. E
1a
1b
1c
NDM3000 Rev. E
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -3A
D
R , NORMALIZED
DS(ON)
-5
-4
-3
-2
-1
0
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-4.0
-6.0
-5.0
-4.5
-7.0
-3.5
-8.0
-3.0
-5.5
-15
-12
-9
-6
-3
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -3.5V
GS
-10
-6.0
-4.0
-8.0
-7.0
-5.0
-4.5
-5.5
Typical Electrical Characteristics
Figure 1. N-Channel On-Region Characteristic.
Figure 2. P-Channel On-Region
Characteristics.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
Figure 6. P-Channel On-Resistance Variation
with Temperature.
0
1
2
3
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0
5.0
4.5
4.0
3.5
V =10V
GS
DS
D
8.0
3.0
0
3
6
9
12
15
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
R , NORMALIZED
DS(on)
8.0
6.0
10
4.5
5.0
4.0
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 3A
D
R , NORMALIZED
DS(ON)
NDM3000 Rev. E
-15
-12
-9
-6
-3
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = -10V
GS
R , NORMALIZED
DS(on)
-6
-5
-4
-3
-2
-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55C
J
25C
125C
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation with
Drain Current and Temperature
.
Figure 9. N-Channel Transfer
Characteristics.
Figure 10. P-Channel Transfer
Characteristics.
Typical Electrical Characteristics
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
0
3
6
9
12
15
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = 10 V
GS
-55C
R , NORMALIZED
DS(on)
1
2
3
4
5
0
2
4
6
8
1 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
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