July 1996
NDP4060 / NDB4060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unles otherwise noted
Symbol
Parameter
NDP4060
NDB4060
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50 s)
40
I
D
Drain Current - Continuous
15
A
- Pulsed
45
P
D
Total Power Dissipation
50
W
Derate above 25C
0.33
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
NDP4060 Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
15A, 60V. R
DS(ON)
= 0.10
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 15 A
40
mJ
I
AR
Maximum Drain-Source Avalanche Current
15
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
T
J
= 125C
1.4
2.4
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 7.5 A
0.078
0.1
T
J
= 125C
0.12
0.165
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
15
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 7.5 A
3
5.7
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25, V
GS
= 0 V,
f = 1.0 MHz
370
450
pF
C
oss
Output Capacitance
165
200
pF
C
rss
Reverse Transfer Capacitance
50
100
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 15 A
V
GS
= 10 V, R
GEN
= 25
8
20
ns
t
r
Turn - On Rise Time
70
100
ns
t
D(off)
Turn - Off Delay Time
18
30
ns
t
f
Turn - Off Fall Time
37
50
ns
Q
g
Total Gate Charge
V
DS
= 48 V
I
D
= 15 A, V
GS
= 10 V
12.7
17
nC
Q
gs
Gate-Source Charge
3.2
nC
Q
gd
Gate-Drain Charge
7
nC
NDP4060 Rev. C
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuos Drain-Source Diode Forward Current
15
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
45
A
V
SD
Source-Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 7.5 A
(Note 1)
0.95
1.3
V
T
J
= 125C
0.88
1.2
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 15 A,
dI
F
/dt = 100 A/s
25
46
100
ns
I
rr
Reverse Recovery Current
1.5
3.4
7
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
3
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP4060 Rev. C
NDP4060 Rev. C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
0
5
1 0
1 5
20
2 5
30
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 6.0V
GS
9.0
1 0
7.0
8.0
2 0
12
0
5
1 0
1 5
2 0
2 5
3 0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
-55C
D
V = 10 V
GS
25C
R , NORMALIZED
DS(on)
2
4
6
8
10
0
5
10
15
20
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
25C
125C
-50
-25
0
25
50
75
100
125
150
175
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = 250A
D
V = V
DS
GS
J
V , NORMALIZED
th
0
1
2
3
4
5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 20V
GS
DS
D
6.0
5.0
7.0
8.0
1 0
12
9.0
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10 V
GS
I = 7.5 A
D
R , NORMALIZED
DS(ON)
NDP4060 Rev. C
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
(continued)
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.4
0.6
0.8
1
1.2
1.4
0.1
0.2
0.5
1
2
5
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
5
10
15
20
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 15A
D
V = 12V
DS
24V
48V
1
2
3
5
10
2 0
30
60
3 0
5 0
1 0 0
2 0 0
3 0 0
5 0 0
7 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms
.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
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