June 1996
NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
NDP6030L
NDB6030L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
16
V
I
D
Drain Current
- Continuous
52
A
- Pulsed
156
P
D
Total Power Dissipation @ T
C
= 25C
75
W
Derate above 25C
0.5
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
NDP6030L Rev.E
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters
and high efficiency switching circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
52 A, 30 V. R
DS(ON)
= 0.0135
@ V
GS
=10 V
R
DS(ON)
= 0.020
@ V
GS
=4.5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175C maximum junction temperature rating.
S
D
G
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche Energy V
DD
= 15 V, I
D
= 52 A
100
mJ
I
AR
Maximum Drain-Source Avalanche Current
52
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
A
T
J
= 125
o
C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -16 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.6
3
V
T
J
= 125
o
C
0.7
1
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 26 A
0.011
0.0135
T
J
= 125
o
C
0.017
0.024
V
GS
= 4.5 V, I
D
= 21 A
0.018
0.02
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
60
A
V
GS
= 4.5 V, V
DS
= 10 V
15
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 26 A
32
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1350
pF
C
oss
Output Capacitance
800
pF
C
rss
Reverse Transfer Capacitance
300
pF
NDP6030L Rev.E
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 52 A,
V
GS
= 10 V, R
GEN
=
24
8
16
nS
t
r
Turn - On Rise Time
130
250
nS
t
D(off)
Turn - Off Delay Time
45
90
nS
t
f
Turn - Off Fall Time
108
200
nS
Q
g
Total Gate Charge
V
DS
= 10 V
I
D
= 52 A , V
GS
=10 V
44
60
nC
Q
gs
Gate-Source Charge
6
nC
Q
gd
Gate-Drain Charge
14
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
52
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
120
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 26 A (
Note 1)
0.93
1.3
V
T
J
= 125C
0.85
1.2
Note:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP6030L Rev.E
NDP6030L Rev.E
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
60
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
3.0
2.5
3.5
4.0
5.0
6.0
4.5
0
10
20
30
40
50
60
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V =3.0V
GS
4.5
5.0
3.5
4.0
10
6.0
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Typical Electrical Characteristics
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 26A
D
R , NORMALIZED
DS(ON)
0
10
20
30
40
50
60
0.5
0.75
1
1.25
1.5
1.75
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 10V
GS
T = 125C
J
25C
-55C
D
R , NORMALIZED
DS(on)
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
0
1
2
3
4
5
0
10
20
30
40
50
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
-50
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I = 250A
D
V = V
GS
DS
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
NDP6030L Rev.E
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
Figure 7. Breakdown Voltage
Variation with Temperature
.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
Typical Electrical Characteristics
(continued)
0
10
20
30
40
50
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
20V
I = 52A
D
V = 10V
DS
15V
0.1
0.2
0.5
1
2
5
10
30
200
300
500
1000
2000
3000
5000
V , DRAIN TO SOURCE VOLTAGE (V)
C
A
P
ACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
D U T
R
GEN
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
5
20
50
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
1 0 %
5 0 %
9 0 %
1 0 %
9 0 %
9 0 %
5 0 %
V
IN
V
OUT
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
1 0 %
PULSE WIDTH
PDF 
ZIP