May 1994
NDP610A / NDP610AE / NDP610B / NDP610BE
NDB610A / NDB610AE / NDB610B / NDB610BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol Parameter
NDP610A NDP610AE
NDB610A NDB610AE
NDP610B NDP610BE
NDB610B NDB610BE
Units
V
DSS
Drain-Source Voltage
100
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
100
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50
s)
40
V
I
D
Drain Current - Continuous
26
24
A
- Pulsed
104
96
A
P
D
Total Power Dissipation @ T
C
= 25
C
100
W
Derate above 25
C
0.67
W/
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
C
NDP610.SAM
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
26 and 24A, 100V. R
DS(ON)
= 0.065 and 0.080
.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175C maximum junction temperature rating.
High density cell design (3 million/in) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
D
G
S
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 25 V, I
D
= 26 A
NDP610AE
NDP610BE
NDB610AE
NDB610BE
250
mJ
I
AR
Maximum Drain-Source Avalanche Current
26
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 100 V,
V
GS
= 0 V
ALL
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
ALL
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
ALL
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250 A
ALL
2
3
4
V
T
J
= 125C
1.4
2.3
3.2
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 13 A
NDP610A
NDP610AE
NDB610A
NDB610AE
0.048 0.065
T
J
= 125C
0.086
0.13
V
GS
= 10 V,
I
D
= 12 A
NDP610B
NDP610BE
NDB610B
NDB610BE
0.08
T
J
= 125C
0.16
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
NDP610A
NDP610AE
NDB610A
NDB610AE
26
A
NDP610B
NDP610BE
NDB610B
NDB610BE
24
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 13 A
ALL
10
16
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
1430
1800 pF
C
oss
Output Capacitance
ALL
280
500
pF
C
rss
Reverse Transfer Capacitance
ALL
85
200
pF
NDP610.SAM
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
V
DD
= 50 V, I
D
= 26 A,
V
GS
= 10 V, R
GEN
= 7.5
ALL
11
20
nS
t
r
Turn - On Rise Time
ALL
72
120
nS
t
D(OFF)
Turn - Off Delay Time
ALL
40
65
nS
t
f
Turn - Off Fall Time
ALL
52
85
nS
Q
g
Total Gate Charge
V
DS
= 80 V,
I
D
= 26 A, V
GS
= 10V
ALL
47
65
nC
Q
gs
Gate-Source Charge
ALL
8
nC
Q
gd
Gate-Drain Charge
ALL
22
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
NDP610A
NDP610AE
NDB610A
NDB610AE
26
A
NDP610B
NDP610BE
NDB610B
NDB610BE
24
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP610A
NDP610AE
NDB610A
NDB610AE
104
A
NDP610B
NDP610BE
NDB610B
NDB610BE
96
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 13 A
ALL
0.88
1.3
V
T
J
= 125C
0.83
1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 26 A,
dI
S
/dt = 100 A/s
ALL
108
155
ns
I
rr
Reverse Recovery Current
ALL
7.4
11
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
ALL
1.5
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
ALL
62.5
C/W
Notes:
1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
NDP610.SAM
NDP610.SAM
0
2
4
6
8
0
10
20
30
40
50
60
70
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
12
10
8.0
7.0
5.0
V = 20V
GS
DS
D
6.0
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 13A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
0
10
20
30
40
50
60
70
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
6.0
20
10
12
8.0
V = 5V
GS
7.0
0
20
40
60
80
0
1
2
3
4
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = 10V
GS
R , NORMALIZED
DS(on)
-55C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
8
0
1 0
2 0
3 0
4 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = 10V
DS
GS
D
T = -55C
J
NDP610.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
0.01
0.1
1
10
30
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
20
40
60
80
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 26A
D
V = 20V
DS
80
50
0.1
0.2
0.5
1
2
5
10
20
50
50
100
200
300
1000
2000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
o n
off
d (off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE W IDTH
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
NDP610.SAM
0
5
10
15
20
25
30
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25C
D
FS
125C
V = 10V
DS
t
p
t
p
V = 10V
GS
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
p
L
L
+
-
V
DD
1
2
3
5
10
20
50
100 150
0.5
1
2
5
10
50
100
200
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 20V
SINGLE PULSE
T = 25C
GS
C
RDS(ON) Limit
100s
1ms
10ms
DC
10s
100ms
Figure 13. Transconductance Variation
with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
Figure 15. Maximum Safe Operating Area.
Figure 16. Transient Thermal Response Curve.
Typical Electrical Characteristics
(continued)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 1.5 C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
0.01
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