May 1997
NDP7052L / NDB7052L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
NDP7052L
NDB7052L
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
50
V
V
GSS
Gate-Source Voltage - Continuous
16
V
- Nonrepetitive (t
P
< 50 s)
25
I
D
Drain Current
- Continuous
75
A
- Pulsed
225
P
D
Maximum Power Dissipation @ T
C
= 25C
150
W
Derate above 25C
1
W/C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
1
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
NDP7052L Rev.B
1
75 A, 50 V. R
DS(ON)
= 0.010
@ V
GS
= 5 V
R
DS(ON)
= 0.0075
@ V
GS
= 10 V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note)
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 25 V, I
D
= 75 A
550
mJ
I
AR
Maximum Drain-Source Avalanche Current
75
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
50
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
0.075
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -16 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note)
V
GS(th)
/
T
J
Gate Threshold VoltageTemp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-0.005
V/
o
C
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.3
2
V
T
J
= 125C
0.8
0.85
1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 37.5 A
0.0085
0.01
T
J
= 150C
0.014
0.018
V
GS
= 10 V, I
D
= 37.5 A
0.0065
0.0075
I
D(on)
On-State Drain Current
V
GS
= 5 V, V
DS
= 10 V
60
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 37.5 A
69
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
4030
pF
C
oss
Output Capacitance
1260
pF
C
rss
Reverse Transfer Capacitance
450
pF
SWITCHING CHARACTERISTICS
(Note)
t
D(on)
Turn - On Delay Time
V
DD
= 25 V, I
D
= 37.5 A,
V
GS
= 5 V, R
GEN
= 10
R
GS
= 10
25
50
nS
t
r
Turn - On Rise Time
215
400
nS
t
D(off)
Turn - Off Delay Time
110
200
nS
t
f
Turn - Off Fall Time
170
300
nS
Q
g
Total Gate Charge
V
DS
= 24 V
I
D
= 75 A , V
GS
= 5 V
92
130
nC
Q
gs
Gate-Source Charge
15
nC
Q
gd
Gate-Drain Charge
45
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
75
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
180
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(Note)
0.9
1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 37.5 A
dI
F
/dt = 100 A/s
40
150
ns
I
rr
Reverse Recovery Current
2
10
A
Note:
Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP7052L Rev.B
1
NDP7052L Rev.B
1
Typical Electrical Characteristics
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
2.5
3.0
5.0
3.5
6.0
-50
-25
0
25
50
75
100
125
150
175
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 5V
GS
I = 37.5A
D
R , NORMALIZED
DS(ON)
Figure 3. On-Resistance Variation
with Temperature
.
1
1.5
2
2.5
3
3.5
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 5V
DS
GS
D
T = -55C
J
Figure 5. Transfer Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
0
20
40
60
80
100
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
4.5
5.0
3.5
4.0
10
6.0
V = 3.0V
GS
Figure 1. On-Region Characteristics.
Figure 4.
On Resistance Variation with
Gate-To- Source Voltage
.
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
20
60
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
Figure 6.
Body Diode Forward Voltage
Variation with Source Current and Temperature.
2
2.5
3
3.5
4
4.5
5
0
0.02
0.04
0.06
0.08
V , GATE TO SOURCE VOLTAGE (V)
ID=37.5A
GS
R , ON-RESISTANCE (OHM)
DS(on)
125C
25C
NDP7052L Rev.B
1
Typical Electrical Characteristics
(continued)
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
48V
I = 75A
D
V = 12V
DS
24V
1
2
3
5
10
20
30
50
300
500
1000
1500
2000
4000
8000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
Figure 8.Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.5
1
3
5
10
20
30
80
0.5
1
2
5
10
20
50
100
200
400
V , DRAIN-SOURCE VOLTAGE (V))
I , DRAIN CURRENT (A)
DS
D
100s
1ms
10ms
100ms
DC
R Limit
DS(ON)
V = 10V
SINGLE PULSE
R = 1 C/W
T = 25 C
GS
C
JC
o
Figure 9. Maximum Safe Operating Area.
0.1
0.3
1
3
10
30
100
300
1,000
0
500
1000
1500
2000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =1 C/W
T = 25C
JC
C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 1.0 C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
Figure 11. Transient Thermal Response Curve
.
PDF 
ZIP