May 1996

NDP7061 / NDB7061
N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

________________________________________________________________________________

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

NDP7061

NDB7061

Units

DSS

Drain-Source Voltage

DGR

Drain-Gate Voltage (R

< 1 M

)

GSS

Gate-Source Voltage - Continuous

± 20

- Nonrepetitive (t

< 50 µs)

± 40

Drain Current

- Continuous

- Pulsed

190

Maximum Power Dissipation @ T

= 25°C

130

Derate above 25°C

0.87

W/°C

STG

Operating and Storage Temperature Range

-65 to 175

°C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

275

°C

NDP7061 Rev. C / NDB7061 Rev. D

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.

64A, 60V. R

DS(ON)

= 0.016

@ V

=10V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications.

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DSS

Single Pulse Drain-Source Avalanche
Energy

= 30 V, I

= 64 A

500

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250 µA

DSS

Zero Gate Voltage Drain Current

= 48 V, V

= 0 V

µA

= 125°C

GSSF

Gate - Body Leakage, Forward

= 20 V, V

= 0 V

100

GSSR

Gate - Body Leakage, Reverse

= -20 V, V

= 0 V

-100

ON CHARACTERISTICS

(Note 1)

GS(th)

Gate Threshold Voltage

= V

, I

= 250 µA

2.9

= 125°C

1.4

2.2

3.6

DS(ON)

Static Drain-Source On-Resistance

= 10 V, I

= 35 A

0.013

0.016

= 125°C

0.021

0.032

D(on)

On-State Drain Current

= 10 V, V

= 10 V

Forward Transconductance

= 10 V, I

= 35 A

DYNAMIC CHARACTERISTICS

iss

Input Capacitance

= 25 V, V

= 0 V,

f = 1.0 MHz

1930

oss

Output Capacitance

870

rss

Reverse Transfer Capacitance

310

SWITCHING CHARACTERISTICS

(Note 1)

D(on)

Turn - On Delay Time

= 25 V, I

= 64 A,

= 10 V, R

GEN

= 5

Turn - On Rise Time

200

D(off)

Turn - Off Delay Time

Turn - Off Fall Time

150

Total Gate Charge

= 48 V,

= 64 A, V

= 10 V

100

Gate-Source Charge

Gate-Drain Charge

37.5

NDP7061 Rev. C / NDB7061 Rev. D

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

DRAIN-SOURCE DIODE CHARACTERISTICS

Maximum Continuos Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

190

Drain-Source Diode Forward Voltage

= 0 V, I

= 35 A

(

Note 1)

0.9

1.3

= 125°C

0.8

1.2

Reverse Recovery Time

= 0 V, I

= 64 A, dI

/dt = 100 A/µs

105

150

Reverse Recovery Current

4.5

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

1.15

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP7061 Rev. C / NDB7061 Rev. D

NDP7061 Rev. C / NDB7061 Rev. D

-50

-25

2 5

5 0

7 5

100

125

150

175

0.5

0.75

1.25

1.5

1.75

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = 10V

I = 35A

R , NORMALIZED

DS(ON)

-50

-25

100

125

150

175

0.4

0.6

0.8

1.2

1.4

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

V , NORMALIZED

GS(th)

I = 250µA

V = V

100

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 5.0V

R , NORMALIZED

DS(on)

7.0

6.0

8.0

100

0.5

0.75

1.25

1.5

1.75

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

25°C

-55°C

V =10V

R , NORMALIZED

DS(on)

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 10V

T = -55°C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

100

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

8.0

V =20V

6.0

7.0

4.5

5.0

NDP7061 Rev. C / NDB7061 Rev. D

-50

-25

100

125

150

175

0.9

0.95

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = 250µA

BV , NORMALIZED

DSS

0.2

0.3

0.5

0.001

0.01

0.1

100

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

V = 0V

T = 125°C

25°C

-55°C

100

120

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

48V

I = 64A

V = 12V

24V

0.1

0.2

0.5

200

300

500

1000

2000

3000

4000

5000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz
V = 0V

oss

iss

rss

OUT

DUT

GEN

1 0 %

5 0 %

9 0 %

1 0 %

9 0 %

5 0 %

O U T

o n

off

d(off)

d(on)

INVERTED

1 0 %

PULSE W IDTH

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

Typical Electrical Characteristics

(continued)

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NDP7061

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NDP7061