May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE
NDB708A / NDB708AE / NDB708B / NDB708BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_____________________________________________________________________
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol Parameter
NDP708A NDP708AE
NDB708A NDB708AE
NDP708B NDP708BE
NDB708B NDB708BE
Units
V
DSS
Drain-Source Voltage
80
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
80
V
V
GSS
Gate-Source Voltage - Continuous
20
V
- Nonrepetitive (t
P
< 50
s)
40
V
I
D
Drain Current - Continuous
60
54
A
- Pulsed
180
162
A
P
D
Total Power Dissipation @ T
C
= 25
C
150
W
Derate above 25
C
1
W/
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
C
NDP708.SAM
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
60 and 54A, 80V. R
DS(ON)
= 0.022 and 0.025
.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175C maximum junction temperature rating.
High density cell design (3 million/in) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
D
G
S
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= 25 V, I
D
= 60 A
NDP708AE
NDP708BE
NDB708AE
NDB708BE
600
mJ
I
AR
Maximum Drain-Source Avalanche Current
60
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
ALL
80
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 80 V,
V
GS
= 0 V
ALL
250
A
T
J
= 125C
1
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
ALL
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
ALL
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250 A
ALL
2
2.6
4
V
T
J
= 125C
1.4
1.9
3.6
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 30 A
NDP708A
NDP708AE
NDB708A
NDB708AE
0.016 0.022
T
J
= 125C
0.025
0.04
V
GS
= 10 V,
I
D
= 27 A
NDP708B
NDP708BE
NDB708B
NDB708BE
0.25
T
J
= 125C
0.044
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
NDP708A
NDP708AE
NDB708A
NDB708AE
60
A
NDP708B
NDP708BE
NDB708B
NDB708BE
54
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 30 A
ALL
16
33
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
2800
3600 pF
C
oss
Output Capacitance
ALL
780
1000 pF
C
rss
Reverse Transfer Capacitance
ALL
285
400
pF
NDP708.SAM
Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
V
DD
= 40 V, I
D
= 60 A,
V
GS
= 10 V, R
GEN
= 5
ALL
15
25
nS
t
r
Turn - On Rise Time
ALL
143
230
nS
t
D(OFF)
Turn - Off Delay Time
ALL
58
90
nS
t
f
Turn - Off Fall Time
ALL
108
180
nS
Q
g
Total Gate Charge
V
DS
= 64 V,
I
D
= 60 A, V
GS
= 10 V
ALL
94
130
nC
Q
gs
Gate-Source Charge
ALL
16
nC
Q
gd
Gate-Drain Charge
ALL
51
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
60
A
NDP708B
NDP708BE
NDB708B
NDB708BE
54
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
180
A
NDP708B
NDP708BE
NDB708B
NDB708BE
162
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 30 A
ALL
0.91
1.3
V
T
J
= 125C
0.82
1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 60 A,
dI
S
/dt = 100 A/s
ALL
98
140
ns
I
rr
Reverse Recovery Current
ALL
6.5
10
A
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
ALL
1
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
ALL
62.5
C/W
Notes:
1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
NDP708.SAM
NDP708.SAM
0
1
2
3
4
5
0
20
40
60
80
100
120
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
10
8.0
7.0
6.0
5.0
V = 20V
GS
DS
D
4.0
-50
-25
0
25
50
75
100
125
150
175
0.4
0.8
1.2
1.6
2
2.4
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
GS
I = 30A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
0
20
40
60
80
100
120
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
6.0
2 0
8.0
1 0
7.0
V = 5V
GS
0
20
40
60
80
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
0
1 0
2 0
3 0
4 0
5 0
6 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = 10V
DS
GS
D
T = -55C
J
NDP708.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
2
10
50
100
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25C
-55C
SD
S
0
40
80
120
160
0
5
10
15
20
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 60A
D
V = 12V
DS
64
24
1
2
3
5
10
20
30
50
100
500
1000
2000
3000
5000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
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