April 1995
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
NDS0605
Units
V
DSS
Drain-Source Voltage
-60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
-60
V
V
GSS
Gate-Source Voltage - Continuous
20
V
I
D
Drain Current - Continuous
-0.18
A
- Pulsed
-1
P
D
Maximum Power Dissipation T
A
= 25C
0.36
W
Derate above 25C
2.9
mW/
o
C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
T
L
Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
300
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
350
C/W
NDS0605.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 0.18A DC and can deliver pulsed currents up to 1A. This
product is particularly suited to low voltage applications
requiring a low current high side switch.
-0.18A, -60V. R
DS(ON)
= 5
@ V
GS
= -10V.
Voltage controlled p-channel small signal switch.
High density cell design for low R
DS(ON)
.
High saturation current
.
D
S
G
1997 Fairchild Semiconductor Corporation
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -10 A
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -48 V, V
GS
= 0 V
-1
A
T
J
= 125C
-500
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-1
-3
V
T
J
= 125C
-0.6
-2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.5 A
5
T
J
= 125C
10
V
GS
= -4.5 V, I
D
= -0.25 A
7.5
T
J
= 125C
15
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -10 V
-0.6
A
V
GS
= -4.5 V, V
DS
= -10 V
-0.25
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -0.2 A
0.07
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
60
pF
C
oss
Output Capacitance
25
pF
C
rss
Reverse Transfer Capacitance
5
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn - On Delay Time
V
DD
= -30 V, I
D
= -0.2 A,
V
GS
= -10 V, R
GEN
= 25
10
nS
t
r
Turn - On Rise Time
15
nS
t
D(off)
Turn - Off Delay Time
15
nS
t
f
Turn - Off Fall Time
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Continuous Source Diode Current
-0.18
A
I
SM
Maximum Pulsed Source Diode Current
(Note 1)
-1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.5 A
(Note 1)
-1.5
V
T
J
= 125C
-1.3
Note :
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDS0605.SAM
NDS0605.SAM
-10
-8
-6
-4
-2
0
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-8
-7
-6
-5
-4
-9
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
I = -0.5A
V = -10V
D
GS
-50
-25
0
25
50
75
100
125
150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V = V
I = -1m A
D
DS
GS
V , NORMALIZED
th
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
-55
D
R , NORMALIZED
DS(on)
125
25
-55
V
-4.5V
-10V
GS
25
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
-10
-8
-6
-4
-2
0
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = -10V
DS
GS
D
T = -55C
J
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.8
1
1.2
1.4
1.6
1.8
2
2.2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -4V
GS
D
R , NORMALIZED
DS(on)
-5
-7
-8
-9
-10
-6
NDS0605.SAM
-50
-25
0
25
50
75
100
125
150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = -10A
D
BV , NORMALIZED
DSS
J
0.6
0.8
1
1.2
1.4
1.6
1.8
0.1
0.2
0.3
0.5
1
1.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125C
J
25
-55
SD
S
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-10
-8
-6
-4
-2
0
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
-48
V = -12V
DS
I = -0.5A
D
-24
0.1
0.2
0.5
1
2
5
10
20 30
60
2
3
5
10
20
30
50
70
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0
0.1
0.2
0.3
0.4
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25
D
FS
V = -10V
DS
125
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Transconductance Variation with Drain
Current and Temperature
Typical Electrical Characteristics
(continued)
NDS0605.SAM
1
2
5
10
2 0
30
60 8 0
0.005
0.01
0.05
0.1
0.5
1
2
3
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
V = -10V
SINGLE PULSE
T = 25C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 12. Maximum Safe Operating Area
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 350 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
o
Figure 13. Transient Thermal Response Curve.
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