April 2000
2000 Fairchild Semiconductor Corporation
NDS9410A Rev B(W)
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
7.3 A, 30 V.
R
DS(ON)
= 28 m
@ V
GS
= 10 V
R
DS(ON)
= 42 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
Continuous
(Note 1a)
7.3
A
Pulsed
20
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
NDS9410A
NDS9410A
13''
12mm
2500 units
NDS9410
A
NDS9410A Rev B(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
28
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
2
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 20 V V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.6
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
-4.3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 7.3 A
V
GS
= 10 V, I
D
= 7.3 A, T
J
=125
C
V
GS
= 4.5 V, I
D
= 6.3 A
V
GS
= 4.5 V, I
D
= 6.3 A, T
J
=125
C
19
30
25
42
28
45
42
75
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
20
A
g
FS
Forward Transconductance
V
DS
= 15 V,
I
D
= 7.3 A
22
S
Dynamic Characteristics
C
iss
Input Capacitance
830
pF
C
oss
Output Capacitance
185
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
80
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
6
12
ns
t
r
TurnOn Rise Time
10
20
ns
t
d(off)
TurnOff Delay Time
18
32
ns
t
f
TurnOff Fall Time
V
DD
= 25 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
5
10
ns
Q
g
Total Gate Charge
14
22
nC
Q
gs
GateSource Charge
2.7
nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 2 A,
V
GS
= 10 V
3.0
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.2
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.2 A
(Note 2)
0.78
1.1
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
NDS9410
A
NDS9410A Rev B(W)
Typical Characteristics
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5.0V
4.5V
2.5V
V
GS
= 10V
6.0V
3.0V
3.5V
4.0V
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
5.0V
4.5V
4.0V
6.0V
10V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 7.3A
V
GS
= 10V
0
0.02
0.04
0.06
0.08
0.1
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 7.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
1.5
2.5
3.5
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9410
A
NDS9410A Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0
3
6
9
12
15
Q
g
, GATE CHARGE (nC)
I
D
= 7.3A
V
DS
= 5V
15V
10V
0
300
600
900
1200
1500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t
1
, TIME (SEC)
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
R
JA
(t) = r(t) + R
JA
R
JA
= 125 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDS9410
A
SOIC(8lds) Packaging
Configuration: Figure 1.0
Components
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOIC (8lds) Packaging Information
Standard
(no flow code)
L86Z
F011
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
95
4,000
Box Dimension (mm)
343x64x343
530x130x83
343x64x343
Max qty per Box
5,000
30,000
8,000
D84Z
TNR
7" Dia
500
184x187x47
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
F63TN Label
ESD Label
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F852
NDS
9959
SOIC-8 Unit Orientation
F
85
2
NDS
99
59
Pin 1
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Customized
Label
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
F
85
2
NDS
99
59
F
85
2
NDS
99
59
F
85
2
NDS
99
59
SO-8 Tape and Reel Data and Package Dimensions
July 1999, Rev. B
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