www.docs.chipfind.ru
February 1996
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDS9956A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
3.7
A
- Pulsed
15
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
NDS9956A.SAM
1
5
6
7
8
4
3
2
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
3.7A, 30V. R
DS(ON)
= 0.08
@ V
GS
= 10V
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
2
A
T
J
= 55C
25
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
2.8
V
T
J
= 125C
0.7
1.2
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 2.2 A
0.06
0.08
T
J
= 125C
0.08
0.13
V
GS
= 4.5 V, I
D
= 1.0 A
0.08
0.11
T
J
= 125C
0.11
0.18
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
15
A
V
GS
= 4.5 V, V
DS
= 10 V
3.5
g
FS
Forward Transconductance
V
DS
= 15 V, I
D
= 3.7 A
6
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
320
pF
C
oss
Output Capacitance
225
pF
C
rss
Reverse Transfer Capacitance
85
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
10
20
ns
t
r
Turn - On Rise Time
13
20
ns
t
D(off)
Turn - Off Delay Time
21
50
ns
t
f
Turn - Off Fall Time
5
50
ns
Q
g
Total Gate Charge
V
DS
= 10 V,
I
D
= 3.7 A, V
GS
= 10 V
9.5
27
nC
Q
gs
Gate-Source Charge
1.5
nC
Q
gd
Gate-Drain Charge
3.3
nC
NDS9956A.SAM
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.2
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.25 A
(Note 2)
0.8
1.3
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 1.25 A, dI
F
/dt = 100 A/s
100
ns
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS9956A.SAM
1a
1b
1c
NDS9956A.SAM
0
1
2
3
0
5
1 0
1 5
2 0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0
5.0
4.5
4.0
3.5
V =10V
GS
DS
D
8.0
3.0
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
G S
I = 3.7A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
1 0 0
1 2 5
1 5 0
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
0
3
6
9
12
15
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
R , NORMALIZED
DS(on)
8.0
6.0
10
4.5
5.0
4.0
0
3
6
9
1 2
1 5
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = 10 V
GS
-55C
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
1
2
3
4
5
0
2
4
6
8
1 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
NDS9956A.SAM
-50
-25
0
25
50
75
100
125
150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
0.5
1
5
1 0
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
2
4
6
8
10
12
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 3.7A
D
20V
15V
V = 10V
DS
0.1
0.2
0.5
1
2
5
1 0
3 0
5 0
1 0 0
2 0 0
3 0 0
5 0 0
8 0 0
1 0 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
0
2
4
6
8
1 0
0
2
4
6
8
1 0
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25C
D
FS
V =10V
DS
125C
Figure 11. Transconductance Variation with Drain
Current and Temperature.
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