February 1996
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
20
-20
V
V
GSS
Gate-Source Voltage
20
20
V
I
D
Drain Current - Continuous T
A
= 25C
(Note 1a)
3.5
3.5
A
- Continuous T
A
= 70C
(Note 1a)
2.8
2.8
- Pulsed T
A
= 25C
14
14
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
NDS9958.SAM
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3.5A, 20V, R
DS(ON)
= 0.1
@ V
GS
= 10V.
P-Channel -3.5A , -20V, R
DS(ON)
= 0.1
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
N-Ch
20
V
V
GS
= 0 V, I
D
= -250 A
P-Ch
-20
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
A
T
J
= 70C
5
A
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
A
T
J
= 70C
-5
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
N-Ch
1
1.5
3
V
T
J
= 125C
0.7
1.1
2.2
V
DS
= V
GS
, I
D
= -250 A
P-Ch
-1
-2.2
-3
T
J
= 125C
-0.8
-1.9
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.5 A
N-Ch
0.062
0.1
T
J
= 125C
0.085
0.14
V
GS
= -10 V, I
D
= -3.5 A
P-Ch
0.08
0.1
T
J
= 125C
0.11
0.16
V
GS
= 6V, I
D
= 3.0 A
N-Ch
0.073
0.12
V
GS
= -6 V, I
D
= -3.0 A
P-Ch
0.112
0.12
V
GS
= 4.5 V, I
D
= 1.0 A
N-Ch
0.08
0.15
V
GS
= -4.5 V, I
D
= -1.0 A
P-Ch
0.165
0.19
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
N-Ch
14
A
V
GS
= -10 V, V
DS
= -5 V
P-Ch
-14
V
GS
= 4.5 V, V
DS
= 5 V
N-Ch
3.5
V
GS
= -4.5 V, V
DS
= -5 V
P-Ch
-2.5
g
FS
Forward Transconductance
V
DS
= 15 V, I
D
= 3.5 A
N-Ch
7
S
V
DS
= -15 V, I
D
= -3.5 A
P-Ch
5
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
DS
= 10V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
525
pF
P-Ch
785
C
oss
Output Capacitance
N-Ch
315
pF
P-Ch
500
C
rss
Reverse Transfer Capacitance
N-Ch
185
pF
P-Ch
245
NDS9958.SAM
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
6
10
ns
P-Ch
9
40
t
r
Turn - On Rise Time
N-Ch
12
25
ns
P-Ch
17
25
t
D(off)
Turn - Off Delay Time
N-Ch
22
30
ns
P-Ch
26
30
t
f
Turn - Off Fall Time
N-Ch
8
20
ns
P-Ch
13
20
Q
g
Total Gate Charge
N-Channel
V
DS
= 10 V,
I
D
= 3.5 A, V
GS
= 10 V
P-Channel
V
DS
= -10 V,
I
D
= -3.5 A, V
GS
= -10 V
N-Ch
17
30
nC
P-Ch
19
30
Q
gs
Gate-Source Charge
N-Ch
1.2
6
nC
P-Ch
3
6
Q
gd
Gate-Drain Charge
N-Ch
5
12
nC
P-Ch
9
12
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
1.7
A
P-Ch
-1.7
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.7 A
(Note 2)
N-Ch
0.86
1.2
V
V
GS
= 0 V, I
S
= -1.7 A
(Note 2)
P-Ch
-0.9
-1.2
t
rr
Reverse Recovery Time
V
GS
= 0V, I
F
= 3.5 A, dI
F
/ dt = 100 A/s
N-Ch
100
ns
P-Ch
100
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS9958.SAM
1a
1b
1c
NDS9958.SAM
0
1
2
3
0
6
1 2
1 8
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0 5.0 4.5
4.0
3.5
2.5
V = 10V
GS
DS
D
3.0
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 10V
G S
I = 3.5A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250A
D
V = V
DS
GS
V , NORMALIZED
th
0
2
4
6
8
10
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
R , NORMALIZED
DS(on)
4.0
6.0
1 0
4.5
5.0
0
3
6
9
12
15
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = 10 V
GS
-55C
R , NORMALIZED
DS(on)
Typical Electrical Characteristics: N-Channel
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
1 0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
1 2 5
V = 10V
DS
GS
D
T = -55C
J
NDS9958.SAM
-50
-25
0
25
50
75
100
125
150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.2
0.4
0.6
0.8
1
1.2
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
1 0
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
4
8
12
16
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 3.5A
V = 10V
D
DS
0.1
0.2
0.5
1
2
5
1 0
2 0
3 0
1 0 0
2 0 0
3 0 0
5 0 0
1 0 0 0
2 0 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics: N-Channel
(continued)
0
2
4
6
8
1 0
0
2
4
6
8
1 0
1 2
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55C
J
25C
D
FS
V =10V
DS
125C
Figure 11. Transconductance Variation with Drain
Current and Temperature.
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