September 1996
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDT2955
Units
V
DSS
Drain-Source Voltage
-60
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1a)
-2.5
A
- Pulsed
-15
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
12
C/W
* Order option J23Z for cropped center drain lead.
NDT2955 Rev. B2
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-2.5A, -60V. R
DS(ON)
= 0.3
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -60 V, V
GS
= 0 V
-10
A
T
J
= 125
o
C
-100
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-2
-2.4
-4
V
T
J
= 125
o
C
-0.8
-2
-2.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -2.5 A
0.21
0.3
T
J
= 125
o
C
0.3
0.45
V
GS
= -4.5 V, I
D
= -2 A
0.36
0.5
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-12
A
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -2.5 A
3.5
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
570
pF
C
oss
Output Capacitance
140
pF
C
rss
Reverse Transfer Capacitance
40
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -30 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
8
15
ns
t
r
Turn - On Rise Time
20
40
ns
t
D(off)
Turn - Off Delay Time
20
40
ns
t
f
Turn - Off Fall Time
5
20
ns
Q
g
Total Gate Charge
V
DS
= -30 V,
I
D
= -2.5 A, V
GS
= -10 V
16
25
nC
Q
gs
Gate-Source Charge
2
5
nC
Q
gd
Gate-Drain Charge
4
8
nC
NDT2955 Rev. B2
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.5 A
(Note2)
-1.3
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDT2955 Rev. B2
1a
1b
1c
NDT2955 Rev. B2
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
-6
-5
-4
-3
-2
-1
0
-12
-9
-6
-3
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-6.0
-5.0
-4.5
-4.0
-3.5
-8.0
-5.5
-7.0
-15
-12
-9
-6
-3
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -4.0V
GS
-10
-6.0
-5.0
-7.0
-4.5
-8.0
-5.5
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -2.5A
D
R , NORMALIZED
DS(ON)
-15
-12
-9
-6
-3
0
0
1
2
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
-55C
D
V = -10 V
GS
R , NORMALIZED
DS(ON)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
-7
-6
-5
-4
-3
-2
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55C
J
25C
125C
Figure 5. Drain Current Variation with Gate
Voltage and Temperature
.
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
NDT2955 Rev. B2
-50
-25
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = -250A
D
BV , NORMALIZED
DSS
J
-2.1
-1.8
-1.5
-1.2
-0.9
-0.6
-0.3
0.001
0.01
0.1
0.5
1
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = -55C
J
25C
125C
V = 0V
GS
SD
S
0.1
0.2
0.5
1
2
5
10
20
50
20
30
50
100
200
300
500
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
Figure 10. Gate Charge Characteristics.
0
5
10
15
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -2.5A
DS
V = -10V
DS
-20V
-30V
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
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