NZT651
NZT651
NPN Current Driver Transistor
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
4.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
*NZT651
P
D
Total Device Dissipation
Derate above 25
C
1.2
9.7
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
103
C/W
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
NZT651
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS*
Symbol
Parameter
Test Conditions
Min
Max
Units
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
75
75
75
40
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
0.3
0.5
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
1.2
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 A, V
CE
= 2.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
DC Typical Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage
I
C
= 10 mA, I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 80 V, I
E
= 0
100
nA
I
EBO
Emitter-Cutoff Current
V
EB
= 4.0 V, I
C
= 0
0.1
A
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 5.0 V,
f = 100 MHz
75
MHz
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
10
0
50
100
150
200
I - COLLECTOR CURRENT (A)
h
- T
Y
P
I
CAL
P
U
L
S
E
D
CU
RRE
NT
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
Collector-Emitter Saturation
Voltage vs Collector Current
P 4P
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
I - COLLECTOR CURRENT (A)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C
= 10
- 40 C
25 C
125 C
NPN Current Driver Transistor
(continued)
NZT651
DC Typical Characteristics
(continued)
AC Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V
-
B
A
S
E-
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
C
= 10
- 40 C
25 C
125 C
Base-Emitter ON Voltage vs
Collector Current
P 4P
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(O
N
)
C
V = 5V
CE
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
P 4P
25
50
75
100
125
150
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
CT
O
R
CU
RR
E
N
T
(
n
A)
A
V = 50V
CB
CBO
NPN Current Driver Transistor
(continued)
Junction Capacitance vs.
Reverse Bias Voltage
NZT651
AC Typical Characteristics
(continued)
POWER DISSIPATION vs
AMBIENT TEMPERATURE
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
SSI
P
A
T
I
O
N
(
W
)
D
o
SOT-223
NPN Current Driver Transistor
(continued)
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