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Электронный компонент: NZT6728

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TN6728A / NZT6728
TN6728A
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 78.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NZT6728
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
TN6728A
*NZT6728
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
125
125
C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN6728A / NZT6728
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS*
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0 mA, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 40 V, I
E
= 0
0.1
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.1
A
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
80
50
20
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, I
B
= 25 mA
0.5
0.35
V
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 250 mA, V
CE
= 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
V
CE
= 5.0 V, I
C
= 200 mA,
f = 20 MHz
2.5
25
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 8
0.01
0.1
1
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLECTOR CURRENT (A)
V
-

C
O
LLE
C
T
O
R
-
E
M
I
TT
E
R

V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C

= 10
125 C
- 40 C
25 C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
0
100
200
300
400
I - COLLECTOR CURRENT (A)
h

-
T
YPIC
A
L
PU
L
SED

C
U
R
R
E
N
T
G
A
IN
FE
- 40 C
25 C
C
V = 5V
CE
125 C
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base-Emitter ON Voltage vs
Collector Current
P 8
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-

B
A
SE-
EM
IT
T
E
R
O
N

VO
L
T
A
G
E
(
V
)
B
E(O
N
)
125 C
- 40 C
25 C
C
V = 5V
CE
Collector-Cutoff Current
vs Ambient Temperature
P 8
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
CT
O
R
CU
RR
E
N
T
(n
A)
A
V = 40V
CB
CBO
Base-Emitter Saturation
Voltage vs Collector Current
P 78
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-

B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E (
V
)
BE
S
A
T
C

= 10
125 C
- 40 C
25 C
Collector-Base Capacitance
vs Collector-Base Voltage
Pr 78
0
4
8
12
16
20
24
28
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C
-
CO
L
L
E
C
T
O
R-
BAS
E
CAP
ACI
T
A
N
C
E
(p
F
)
C B
OB
O
F = 1.0 MHz
Gain Bandwidth Product
vs Collector Current
1
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h

-
G
A
I
N

BAN
DW
I
D
T
H
P
R
O
DUC
T
(
M
Hz
)
C
FE
V = 10V
CE
Safe Operating Area TO-226
P 8
1
10
100
0.01
0.1
1
10
V - COLLECTOR-EMITTER VOLTAGE (V)
I
- CO
L
L
E
C
T
O
R

C
URRE
NT
(A)
CE
C
*PULSED
OPERATION
T = 25 C
A
LIMIT DETERMINED
BY BV
CEO
DC T
=
25
C
CO
LLE
CT
OR L
EAD
DC T
=
25
C
AM
BIE
NT
100

S*
10

S*
1.
0 m
s*
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R DI
S
S
I
P
A
T
I
O
N (W
)
D
o
TO-226
SOT-223