2N7052 / 2N7053 / NZT7053
2N7052
NZT7053
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
100
V
V
CBO
Collector-Base Voltage
100
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
C
B
E
TO-92
B
C
C
SOT-223
E
Symbol
Characteristic
Max
Units
2N7052
2N7053
*NZT7053
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
1,000
8.0
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
50
125
C/W
2N7053
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
2N7052 / 2N7053 / NZT7053
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
100
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
100
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0 mA, I
C
= 0
12
V
I
CBO
Collector-Cutoff Current
V
CB
= 80 V, I
E
= 0
0.1
A
I
CES
Collector-Cutoff Current
V
CE
= 80 V, I
E
= 0
0.2
A
I
EBO
Emitter-Cutoff Current
V
EB
= 7.0 V, I
C
= 0
0.1
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
10,000
1,000
20,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 0.1 mA
1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
BE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
m
s, Duty Cycle
1.0%
F
T
Transition Frequency
I
C
= 100 mA, V
CE
= 5.0 V,
200
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V,f = 1.0 MHz 2N7052
2N7053
10
8.0
pF
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
-
TY
PI
CA
L
P
U
LS
E
D
CU
RR
E
N
T
G
A
I
N
(
K
)
C
FE
125 C
25 C
- 40C
Collector-Emitter Saturation
Voltage vs Collector Current
P 06
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
EMI
TTER
VOL
T
A
GE (
V
)
C
C
ESA
T
= 1000
125 C
25 C
- 40C
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V - BA
SE EMITTER VOL
T
A
GE (V)
C
BE
SA
T
= 1000
125 C
25 C
- 40C
Base Emitter ON Voltage vs
Collector Current
P 06
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
- BA
SE
EMITTE
R ON
VOL
T
A
GE
(V)
C
BE
ON
V = 5V
CE
125 C
25 C
- 40C
Collector-Cutoff Current
vs. Ambient Temperature
P 06
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - C
OLLEC
T
O
R
CUR
RENT
(nA
)
A
CB
O
V = 80V
CB
Junction Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
10
100
REVERSE BIAS VOLTAGE (V)
J
U
N
C
T
I
O
N
CA
P
A
CI
T
A
NC
E (
p
F
)
C cb
C
ib
Typical Collector-Emitter Leakage
Current vs Temperature
0
40
80
120
160
0.1
1
10
100
1000
T - JUNCTION TEMPERATURE ( C)
I
-
L
E
AK
AG
E
C
U
R
R
E
N
T
(
n
A)
J
CE
S
V = 80V
CE
V = 0
BE
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0 .5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
IP
A
T
IO
N
(
W
)
D
o
TO-92
SOT-223
TO-226
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