2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
P
1087
TO-92
D
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25
C unless otherwise noted
Thermal Characteristics
T
A
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
- 30
V
V
GS
Gate-Source Voltage
30
V
I
GF
Forward Gate Current
50
mA
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
GSS
Gate-Source Breakdown Voltage
V
DS
= 0V, IG = 1
A
30
V
I
GSS
Gate Reverse Current
V
GS
= 15V
2
nA
I
D
(off)
Drain Cutoff Leakage Current
V
DS
= 15V
V
GS
= 7V
10
nA
T = +85
C
0.5
A
I
DGO
Drain-Gate Leakage Current
V
DG
= 15V
I
S
= 0
2
N
A
T = +85
C
0.1
A
I
DSS
Zero-Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
5
mA
V
GS
(off)
Gate-Source Cutoff Voltage
V
DS
= 15V, I
D
= 1
A
5
V
V
DS
(on)
Drain-Source On Voltage
V
GS
= 0V, I
D
= 3mA
0.5
V
r
DS
(on)
Drain-Source On Resistance
V
GS
= 0V, I
D
= 1mA
150
r
ds
(on)
Drain-Source On Resistance
V
GS
= 0V, I
D
= 0, f = 1kHz
150
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V, f = 1MHz
45
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 0V, V
GS
= 7V, f = 1MHz
10
pF
t
d
(on)
Trun On Time
V
DD
= -6V
V
GS
(off) = +7V
R
L
= 1.8k
I
D
(on) = -3mA
15
ns
t
r
Rise Time
75
ns
t
d
(off)
Trun Off Time
25
ns
t
f
Fall Time
100
ns
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
P1087
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
Sourced from process 88.
S G
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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This datasheet contains the design specifications for
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