PN4258 / MMBT4258
PN4258
MMBT4258
PNP Switching Transistor
This device is designed for very high speed saturate switching
at collector currents to 100 mA. Sourced from Process 65.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
12
V
V
CBO
Collector-Base Voltage
12
V
V
EBO
Emitter-Base Voltage
4.5
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
PN4258
*MMBT4258
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
C
B
E
SOT-23
Mark: 78
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN4258 / MMBT4258
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS*
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CES
Collector-Emitter Breakdown Voltage*
I
C
= 100
A, V
BE
= 0
12
V
V
CEO(sus)
Collector-Emitter Sustaining Voltage*
I
C
= 3.0 mA, I
B
= 0
12
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
12
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
4.5
V
I
CES
Collector Cutoff Current
V
CE
= 6.0 V, V
BE
= 0
V
CE
= 6.0 V, V
BE
= 0, T
A
= 65
C
0.01
5.0
A
A
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
700
700
MHz
MHz
C
ibo
Input Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 1.0 MHz
3.5
pF
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
3.0
pF
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
t
on
Turn-On Time
V
CC
= 1.5 V, V
BE(off)
= 0 V,
15
ns
t
d
Delay Time
I
C
= 10 mA, I
B1
= 1.0 mA
10
ns
t
r
Rise Time
15
ns
t
off
Turn-Off Time
V
CC
= 1.5 V, I
C
= 10mA
20
ns
t
s
Storage Time
I
B1
= I
B2
= 1.0 mA
20
ns
t
f
Fall Time
10
ns
t
s
Storage Time
I
C
= 10 mA, I
B1
= I
B2
= 10 mA
20
ns
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0
Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5
Vtf=3 Xtf=6 Rb=10)
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 10 mA, V
CE
= 3.0 V
I
C
= 50 mA, V
CE
= 1.0 V
15
30
30
120
V
CE(s at)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.15
0.5
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.75
0.95
1.5
V
V
PNP Switching Transistor
(continued)
PN4258 / MMBT4258
DC Typical Characteristics
PNP Switching Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
P 6
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
C
B
ESA
T
= 10
25 C
- 40 C
125 C
Base Emitter ON Voltage vs
Collector Current
P 65
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE E
M
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
C
B
EON
V = 1V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
P 6
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- C
O
L
L
E
CT
O
R
CU
RR
E
N
T
(n
A)
A
CBO
V = 10V
CB
Typical Pulsed Current Gain
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
I
CA
L
P
U
L
S
E
D
CU
RRE
NT
G
A
I
N
C
FE
125 C
25 C
- 40 C
Vce = 1V
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
E
M
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
PN4258 / MMBT4258
AC Typical Characteristics
Switching Times vs.
Ambient Temperature
Rise Time vs. Collector and
Turn On Base Currents
Input / Output Capacitance
vs. Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f
T
)
Switching Times vs.
Collector Current
Delay Time vs. Turn On Base
Current / Reverse Emitter Voltage
PNP Switching Transistor
(continued)
PN4258 / MMBT4258
AC Typical Characteristics
(continued)
Storage Time vs.
Turn On / Turn Off Base Currents
Storage Time vs.
Turn On / Turn Off Base Currents
Storage Time vs.
Turn On / Turn Off Base Currents
Fall Time vs. Turn On / Turn Off
Base Currents
Fall Time vs. Turn On / Turn Off
Base Currents
Fall Time vs. Turn On / Turn Off
Base Currents
PNP Switching Transistor
(continued)
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