1 of 4
100007C
NOTES
1. Derate power dissipation linearly
1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16" (1.6mm)
from housing
QEB363
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
100
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Peak Emission Wavelength
I
F
= 100 mA
!
P
--
940
--
nm
Emission Angle
I
F
= 100 mA
"
--
12
--
Deg.
Forward Voltage
I
F
= 100 mA, t
P
= 20 ms
V
F
--
--
1.6
V
Reverse Current
V
R
= 5 V
I
R
--
--
100
A
Radiant Intensity
I
F
= 100 mA, t
P
= 20 ms
I
e
8
--
--
mW/sr
Rise Time
I
F
= 100 mA,
t
r
--
1
--
s
Fall Time
t
P
= 20 ms
t
f
--
1
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
PACKAGE DIMENSIONS
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
CATHODE
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
T-3/4 (2mm) Surface Mount Package
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
Narrow Emission Angle, 24
Wavelength = 940 nm, GaAs
Pink Tinted Lens
Matched Photosensor: QSB363
High Radiant Intensity
ANODE
CATHODE
SCHEMATIC
200
980
500
200
100
20
2
1
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
50
10
5
960
940
920
900
20
10
5
2
1
0.1
-25
0
25
50
75
100
0.2
0.5
-25
0
0
10
10
20
20
30
30
40
0.6
0.4
0.2
0
0.2
0.4
0.6
50
60
70
80
90
40
50
60
70
80
90
25
50
75
100
100
80
60
40
20
0
880 900 920 940 960 980 1000 1020 1040
160
120
80
40
0
-25
0
25
50
75
85
100
Ambient Temperature T
A
(C)
Fig. 1 Maximum Forward Current vs.
Temperature
Fig. 3 Peak Emission Wavelength vs.
Ambient Temperature
Fig. 4 Forward Current vs.
Forward Voltage
Fig. 2 Relative Radiant Intensity vs.
Wavelength
Fig. 5 Relative Radiant Flux vs.
Ambient Temperature
Fig. 6 Relative Radiant Intensity vs.
Angular Displacement
Forwar
d Current I
F
(mA)
Ambient Temperature T
A
(C)
P
eak Emission
W
a
velength (nm)
Ambient Temperature T
A
(C)
Relative Radiant Flux (%)
Ambient Temperature T
A
(C)
Relative Radiant Intensity
Forward Voltage V
F
(V)
Forwar
d Current I
F
(mA)
Wavelengthl
!#
(nm)
Relative Radiant Intensity (%)
I
F
= 20 mA
T
A
= 25C
TYPICAL PERFORMANCE CURVES
2 of 4
100007C
QEB363
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
3 of 4
100007C
SURFACE MOUNT OPTIONS
T-3/4 PACKAGES
NOTES: (Applies to all package drawings)
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Three lead forming options: Gull Wing, Yoke and Z-Bend
Compatible with automatic placement equipment
Supplied on tape and reel or in bulk packaging
Compatible with vapor phase reflow solder processes
YOKE LEAD CONFIGURATION
0.074 (1.9)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.118 (3.0)
0.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.043 (1.1)
0.098 (2.5)
0.051 (1.3)
0.141 (3.6)
0.031 (0.8)
ANODE
0.008 (0.2)
0.283 (7.2)
Z-BEND LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.080 (2.0)
0.043 (1.1)
0.236 (6.0)
0.220 (5.6)
0.177 (4.5)
0.161 (4.1)
0.031 (0.8)
ANODE
0.127 (3.25)
0.112 (2.85)
GULL WING LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.166 (4.2)
0.020 (0.51)
0.016 (0.4)
0.078 (2.0)
0.043 (1.1)
0.005 (0.13)
ANODE
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com
2000 Fairchild Semiconductor Corporation
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QEB363
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
100007C
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