0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 2.67
mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16"
(1.6mm) minimum
from housing.
PACKAGE DIMENSIONS
FEATURES
= 880 nm
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched Photosensor: QSD122/123/124
Narrow Emission Angle, 18
High Output Power
Package material and color: Clear, peach tinted, plastic
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
100
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
200
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
I
F
= 20 mA
PE
--
880
--
nm
Emission Angle
I
F
= 100 mA
--
9
--
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
--
--
1.7
V
Reverse Current
V
R
= 5 V
I
R
--
--
10
A
Radiant Intensity QED121
I
F
= 100 mA, tp = 20 ms
I
E
16
--
40
mW/sr
Radiant Intensity QED122
I
F
= 100 mA, tp = 20 ms
I
E
32
--
100
mW/sr
Radiant Intensity QED123
I
F
= 100 mA, tp = 20 ms
I
E
50
--
--
mW/sr
Rise Time
I
F
= 100 mA
t
r
--
800
--
ns
Fall Time
t
f
--
800
--
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
2001 Fairchild Semiconductor Corporation
DS300336
4/19/01
1 OF 3
www.fairchildsemi.com
Normalized to:
I
F
= 100 mA, T
A
= 25C
Pulse Width = 100 s
10
1
1
10
NORMALIZED RADIANT INTENSITY
I
F
- INPUT CURRENT (mA)
Fig. 1 Normalized Radiant Intensity vs. Input Current
100
1000
0.1
0.01
0.001
NORMALIZED COLLECT
OR CURRENT
LENS TIP SEPERATION (INCHES)
Fig. 2 Coupling Characteristics of QED12X and QSD12X
0
1
1
0.8
0.6
0.4
0.2
0
2
3
4
5
6
Normalized to:
Pulse Width = 100 s
Duty Cycle = 0.1%
V
CC
= 5 V
R
L
= 100
T
A
= 25C
I
F
= 100 mA
I
F
= 20 mA
2.5
2
1.5
1
0.5
-30
-40
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
T
A
- TEMPERATURE (C)
Fig. 3 Forward Voltage vs. Temperature
I
F
= 10 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 50 mA
Pulse Width = 100 s
Duty Cycle = 0.1%
Fig. 5 Radiation Pattern
Fig. 4 Normalized Radiant Intensity vs. Wavelength
(nm)
775
800
825
850
875
900
925
950
NORMALIZED RADIANT INTENSITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
20
40
60
80
100
0
20
40
60
80
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
TYPICAL PERFORMANCE CURVES
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com
2 OF 3
4/19/01
DS300336
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
DS300336
4/19/01
3 OF 3
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